參數(shù)資料
型號(hào): BZT03C
廠商: Vishay Intertechnology,Inc.
英文描述: Silicon Z-Diodes and Transient Voltage Suppressors(硅齊納二極管和瞬變電壓抑制器)
中文描述: 硅的Z -二極管和瞬態(tài)電壓抑制器(硅齊納二極管和瞬變電壓抑制器)
文件頁(yè)數(shù): 1/5頁(yè)
文件大?。?/td> 67K
代理商: BZT03C
BZT03C...
Vishay Telefunken
Rev. 2, 01-Apr-99
1 (5)
www.vishay.de
FaxBack +1-408-970-5600
Document Number 85599
Silicon Z–Diodes and Transient Voltage Suppressors
Features
Glass passivated junction
Hermetically sealed package
Clamping time in picoseconds
Applications
Medium power voltage regulators and medium
power transient suppression circuits
94 9539
Absolute Maximum Ratings
T
j
= 25 C
Parameter
Power dissipation
Test Conditions
l=10mm, T
L
=25 C
T
amb
=25 C
Type
Symbol
P
V
P
V
P
ZRM
P
ZSM
T
j
T
stg
Value
3.25
1.3
10
600
175
–65...+175
Unit
W
W
W
W
C
C
Repetitive peak reverse power dissipation
Non repetitive peak surge power dissipation
Junction temperature
Storage temperature range
t
p
=100 s, T
j
=25 C
Maximum Thermal Resistance
T
j
= 25 C
Parameter
Junction ambient
Test Conditions
Symbol
R
thJA
R
thJA
Value
46
100
Unit
K/W
K/W
l=10mm, T
L
=constant
on PC board with spacing 25mm
Electrical Characteristics
T
j
= 25 C
Parameter
Forward voltage
Test Conditions
I
F
=0.5A
Type
Symbol
V
F
Min
Typ
Max
1.2
Unit
V
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