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參數(shù)資料
| 型號(hào)： | BZG142 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | SMA ZenBlock?; zener with integrated blocking diode |
| 中文描述： | 形狀記憶合金ZenBlock？;與齊納二極管集成阻塞 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 61K |
| 代理商： | BZG142 |
2001 Aug 20
4
Philips Semiconductors
Product specification
SMA ZenBlock
; zener
with integrated blocking diode
BZG142
GRAPHICAL DATA
handbook, halfpage
Ptot
(W)
0
200
0
2
1
3
MBH451
100
T (
°
C)
Fig.3
Maximum total power dissipation as a
function of temperature.
Solid line: tie-point temperature.
Dotted line: ambient temperature; device mounted on an Al
2
O
3
printed-circuit board as shown in Fig.9.
handbook, halfpage
(%)
MGD521
100
90
50
10
t1
t2
t
Fig.4
Non-repetitive peak reverse current pulse
definition.
In accordance with “IEC 60060-1, Section 8”
t
1
= 10
μ
s.
t
2
= 1000
μ
s.
handbook, halfpage
PZSM
(W)
MLD681
10
4
10
2
10
3
10
1
1
tp (
μ
s)
10
10
2
10
3
10
4
10
Fig.5
Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (square pulse).
T
j
= 25
°
C prior to surge.
See Fig.6.
handbook, halfpage
percentage
(%)
0
200
100
0
20
40
60
80
40
80
Tamb (
°
C)
120
160
MGU425
Fig.6
Peak pulse power (P
ZSM
, P
RSM
) or current
(I
RSM
) derating curve.
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