參數(shù)資料
型號: BZG04
廠商: NXP Semiconductors N.V.
元件分類: TVS-瞬態(tài)抑制二極管
英文描述: Transient voltage suppressor diodes(瞬變電壓抑制二極管)
中文描述: 瞬態(tài)電壓抑制二極管(瞬變電壓抑制二極管)
文件頁數(shù): 4/7頁
文件大小: 31K
代理商: BZG04
1996 Sep 19
4
Philips Semiconductors
Preliminary specification
Transient voltage suppressor diodes
BZG04 series
Note
1.
Non-repetitive peak reverse current in accordance with “IEC 60-1, Section 8”(10/1000
μ
s pulse); see Fig.4.
THERMAL CHARACTERISTICS
Notes
1.
2.
Device mounted on an Al
2
O
3
printed-circuit board, 0.7 mm thick; thickness of Cu-layer
35
μ
m, see Fig.5.
Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
40
μ
m, see Fig.5.
For more information please refer to the “General Part of associated Handbook”
BZG04-110
BZG04-120
BZG04-130
BZG04-150
BZG04-160
BZG04-180
BZG04-200
BZG04-220
124
138
153
168
188
208
228
251
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
5
5
5
5
5
2
2
2
185
204
224
249
276
305
336
380
1.6
1.5
1.3
1.2
1.1
1.0
0.9
0.8
5
5
5
5
5
5
5
5
110
120
130
150
160
180
200
220
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
R
th j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
25
100
150
K/W
K/W
K/W
note 1
note 2
TYPE
NUMBER
REVERSE
BREAKDOWN
VOLTAGE
TEMPERATURE
COEFFICIENT
TEST
CURRENT
CLAMPING
VOLTAGE
REVERSE CURRENT
at STAND-OFF
VOLTAGE
V
(BR)R
(V)
at I
test
S
Z
(%/K) at I
test
I
test
(mA)
V
(CL)R
(V)
at I
RSM
(A)
note 1
I
R
(
μ
A)
at V
R
(V)
MIN.
MIN.
MAX.
MAX.
MAX.
相關PDF資料
PDF描述
BZG04-10 Transient voltage suppressor diodes
BZG04-100 Transient voltage suppressor diodes
BZG04-11 Transient voltage suppressor diodes
BZG04-110 Transient voltage suppressor diodes
BZG04-12 Transient voltage suppressor diodes
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