參數(shù)資料
型號(hào): BZG03C
廠商: Vishay Intertechnology,Inc.
英文描述: Silicon Z-Diode(穩(wěn)壓應(yīng)用電壓范圍10-270V的齊納二極管)
中文描述: 硅穩(wěn)壓二極管(穩(wěn)壓應(yīng)用電壓范圍10 - 270V的的齊納二極管)
文件頁(yè)數(shù): 1/5頁(yè)
文件大?。?/td> 71K
代理商: BZG03C
BZG03C...
Vishay Telefunken
Rev. 5, 01-Apr-99
1 (5)
www.vishay.de
FaxBack +1-408-970-5600
Document Number 85593
Silicon Z–Diodes
Features
Glass passivated junction
High reliability
Voltage range 10V to 270V
Fits onto 5 mm SMD footpads
Wave and reflow solderable
Applications
Voltage stabilization
15 811
Absolute Maximum Ratings
T
j
= 25 C
Parameter
Power dissipation
Test Conditions
R
thJA
<25K/W, T
amb
=100 C
R
thJA
<100K/W, T
amb
=50 C
t
p
=100 s sq.pulse, T
j
=25 C
prior to surge
Type
Symbol
P
V
P
V
P
ZSM
Value
3
1.25
600
Unit
W
W
W
Non repetitive peak surge power
dissipation
Junction temperature
Storage temperature range
T
j
175
C
C
T
stg
–65...+150
Maximum Thermal Resistance
T
j
= 25 C
Parameter
Junction lead
Junction ambient
mounted on epoxy–glass hard tissue, Fig. 1a
mounted on epoxy–glass hard tissue, Fig. 1b
mounted on Al–oxid–ceramic (Al
2
O
3
), Fig. 1b
Test Conditions
Symbol
R
thJL
R
thJA
R
thJA
R
thJA
Value
25
150
125
100
Unit
K/W
K/W
K/W
K/W
Electrical Characteristics
T
j
= 25 C
Parameter
Forward voltage
Test Conditions
I
F
=0.5A
Type
Symbol
V
F
Min
Typ
Max
1.2
Unit
V
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