參數(shù)資料
型號: BZD27C3V6P
廠商: Vishay Intertechnology,Inc.
元件分類: 參考電壓二極管
英文描述: surface mount silicon Zener diodes
中文描述: 表面貼裝硅穩(wěn)壓二極管
文件頁數(shù): 1/7頁
文件大?。?/td> 238K
代理商: BZD27C3V6P
BZD27C3V6P to BZD27C200P
Document Number 85810
Rev. 1.8, 13-Apr-05
Vishay Semiconductors
www.vishay.com
1
17249
Zener Diodes with Surge Current Specification
Features
Sillicon Planar Zener Diodes
Low profile surface-mount package
Zener and surge current specification
Low leakage current
Excellent stability
High temperature soldering:
260 °C/10 sec. at terminals
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Mechanical Data
Case:
JEDEC DO-219AB (SMF
) Plastic case
Weight:
approx. 15 mg
Packaging codes/options:
GS18 / 10 k per 13 " reel, (8 mm tape), 50 k/box
GS08 / 3 k per 7 " reel, (8 mm tape), 30 k/box
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Power dissipation
1)
Mounted on epoxy-glass PCB with 3 x 3 mm Cu pads (
40
μ
m thick)
2)
T
J
= 25 °C prior to surge
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to ambient air
1)
Thermal resistance junction to lead
1)
Mounted on epoxy-glass PCB with 3 x 3 mm Cu pads (
40
μ
m thick)
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Test condition
Symbol
P
tot
P
tot
P
ZSM
Value
2.3
Unit
W
T
L
= 80 °C
T
A
= 25 °C
100
μ
s square pulse
2)
0.8
1)
300
W
Non-repetitive peak pulse power
dissipation
W
10/1000
μ
s waveform (BZD27-
C7V5P to BZD27-C100P)
2)
10/1000
μ
s waveform (BZD27-
C110P to BZD27-C200P)
2)
P
RSM
150
W
P
RSM
100
W
Test condition
Symbol
R
thJA
R
thJL
T
j
T
S
Value
180
Unit
K/W
30
K/W
Maximum junction temperature
150
°C
Storage temperature range
- 55 to + 150
°C
Test condition
Symbol
V
F
Min
Typ.
Max
1.2
Unit
V
I
F
= 0.2 A
e3
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