參數(shù)資料
型號: BZD27-C8V2
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Voltage regulator diodes
中文描述: 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE
封裝: HERMETIC SEALED, GLASS PACKAGE-2
文件頁數(shù): 7/9頁
文件大小: 38K
代理商: BZD27-C8V2
1996 Jun 10
7
Philips Semiconductors
Product specification
Voltage regulator diodes
BZD27 series
GRAPHICAL DATA
Fig.2
Maximum total power dissipation as a
function of temperature.
Types BZD27-C3V6 to -C6V8
Solid line: tie-point temperature.
Dotted line: ambient temperature;
device mounted as shown in Fig.7.
handbook, halfpage
0
200
0
1
2
MBH454
Ptot
(W)
100
T (
°
C)
Fig.3
Maximum total power dissipation as a
function of temperature.
Types BZD27-C7V5 to -C510
Solid line: tie-point temperature.
Dotted line: ambient temperature;
device mounted as shown in Fig.7.
handbook, halfpage
0
200
0
1
2
MBH455
Ptot
(W)
100
T (
°
C)
T
j
= 25
°
C prior to surge.
See also Fig 5.
Fig.4
Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (square pulse).
handbook, halfpage
10
2
10
10
2
10
3
4
10
1
1
tp (ms)
PZSM
(W)
10
MGD524
T
j
= 25
°
C prior to surge.
Fig.5
Maximum non-repetitive peak reverse
power dissipation as a function of nominal
working voltage.
handbook, halfpage
PZSM
(W)
0
3V9
4V7
6V8
300
100
0
200
MGD525
5V6
VZnom (V)
3V6
4V3
6V2
5V1
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BZD27C8V2P M2G 功能描述:DIODE ZENER 8.2V 1W SUB SMA 制造商:taiwan semiconductor corporation 系列:- 包裝:帶卷(TR) 零件狀態(tài):停產(chǎn) 電壓 - 齊納(標(biāo)稱值)(Vz):8.2V 容差:±6.09% 功率 - 最大值:1W 阻抗(最大值)(Zzt):2 Ohms 不同?Vr 時的電流 - 反向漏電流:10μA @ 3V 不同 If 時的電壓 - 正向(Vf:1.2V @ 200mA 工作溫度:-55°C ~ 175°C(TJ) 安裝類型:表面貼裝 封裝/外殼:DO-219AB 供應(yīng)商器件封裝:Sub SMA 標(biāo)準(zhǔn)包裝:7,500