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參數(shù)資料
| 型號(hào)： | BZD27-C6V8 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Voltage regulator diodes |
| 中文描述： | 6.8 V, 0.8 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| 封裝： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 38K |
| 代理商： | BZD27-C6V8 |
1996 Jun 10
2
Philips Semiconductors
Product specification
Voltage regulator diodes
BZD27 series
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Zener working voltage range:
3.6 to 270 V for 46 types
Transient suppressor stand-off
voltage range: 6.2 to 430 V
for 45 types
Supplied in 8 mm embossed tape.
DESCRIPTION
Cavity free cylindrical glass SOD87
package through Implotec
(1)
technology. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
Fig.1 Simplified outline (SOD87) and symbol.
handbook, 4 columns
MAM249
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
P
tot
total power dissipation
BZD27-C3V6 to -C6V8
BZD27-C7V5 to -C510
total power dissipation
BZD27-C3V6 to -C6V8
BZD27-C7V5 to -C510
non-repetitive peak reverse
power dissipation
BZD27-C3V6 to -C6V8
BZD27-C7V5 to -C510
non-repetitive peak reverse
power dissipation
BZD27-C7V5 to -C510
storage temperature
BZD27-C3V6 to -C6V8
BZD27-C7V5 to -C510
junction temperature
BZD27-C3V6 to -C6V8
BZD27-C7V5 to -C510
T
tp
= 105
°
C; see Figs 2 and 3
1.7
2.3
W
W
P
tot
PCB mounted (see Fig.7)
T
amb
= 60
°
C; see Fig.2
T
amb
= 55
°
C; see Fig.3
t
p
= 100
μ
s; square pulse;
T
j
= 25
°
C prior to surge; see Figs.4 and 5
0.8
0.8
W
W
P
ZSM
300
300
W
W
P
RSM
10/1000
μ
s exponential pulse (see Fig.8);
T
j
= 25
°
C prior to surge
150
W
T
stg
65
65
+200
+175
°
C
°
C
T
j
65
65
+200
+175
°
C
°
C
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