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參數(shù)資料
| 型號： | BZD23-C82 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Voltage regulator diodes |
| 中文描述： | 150 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 40K |
| 代理商： | BZD23-C82 |
1996 Jun 10
2
Philips Semiconductors
Product specification
Voltage regulator diodes
BZD23 series
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Zener working voltage range:
3.6 to 270 V for 46 types
Transient suppressor stand-off
voltage range:
6.2 to 430 V for 45 types
Available in ammo-pack.
DESCRIPTION
Cavity free cylindrical glass package
through Implotec
(1)
technology.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
(1) Implotec is a trademark of Philips.
Fig.1 Simplified outline (SOD81) and symbol.
handbook, 4 columns
a
k
MAM248
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
P
tot
total power dissipation
BZD23-C3V6 to -C6V8
BZD23-C7V5 to -C510
total power dissipation
BZD23-C3V6 to -C6V8
BZD23-C7V5 to -C510
non-repetitive peak reverse
power dissipation
BZD23-C3V6 to -C6V8
BZD23-C7V5 to -C510
non-repetitive peak reverse
power dissipation
BZD23-C7V5 to -C510
storage temperature
BZD23-C3V6 to -C6V8
BZD23-C7V5 to -C510
junction temperature
BZD23-C3V6 to -C6V8
BZD23-C7V5 to -C510
T
tp
= 25
°
C; lead length 10 mm;
see Figs 2 and 3
2.0
2.5
W
W
P
tot
T
amb
= 55
°
C; see Figs 2 and 3;
PCB mounted (see Fig.7)
1.0
1.0
W
W
P
ZSM
t
p
= 100
μ
s; square pulse;
T
j
= 25
°
C prior to surge; see Figs 4 and 5
300
300
W
W
P
RSM
10/1000
μ
s exponential pulse (see Fig.8);
T
j
= 25
°
C prior to surge
150
W
T
stg
65
65
+200
+175
°
C
°
C
T
j
65
65
+200
+175
°
C
°
C
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