參數(shù)資料
型號: BZD23-C360
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Voltage regulator diodes
中文描述: 150 W, UNIDIRECTIONAL, SILICON, TVS DIODE
封裝: HERMETIC SEALED, GLASS PACKAGE-2
文件頁數(shù): 6/9頁
文件大?。?/td> 40K
代理商: BZD23-C360
1996 Jun 10
6
Philips Semiconductors
Product specification
Voltage regulator diodes
BZD23 series
Note
1.
Non-repetitive peak reverse current in accordance with “IEC 60-1, Section 8”(10/1000
μ
s pulse); see Fig.8.
THERMAL CHARACTERISTICS
Note
1.
Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
40
μ
m, see Fig.7.
For more information please refer to the “General Part of associated Handbook”
BZD23-C180
BZD23-C200
BZD23-C220
BZD23-C240
BZD23-C270
BZD23-C300
BZD23-C330
BZD23-C360
BZD23-C390
BZD23-C430
BZD23-C470
BZD23-C510
168
188
208
228
251
280
310
340
370
400
440
480
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
5
5
2
2
2
2
2
2
2
2
2
2
249
276
305
336
380
419
459
498
537
603
655
707
0.60
0.54
0.50
0.45
0.40
0.36
0.33
0.30
0.28
0.25
0.23
0.21
5
5
5
5
5
5
5
5
5
5
5
5
150
160
180
200
220
240
270
300
330
360
390
430
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
BZD23-C3V6 to -C6V8
BZD23-C7V5 to -C510
thermal resistance from junction to ambient
BZD23-C3V6 to -C6V8
BZD23-C7V5 to -C510
lead length = 10 mm
87
60
K/W
K/W
R
th j-a
note 1
145
120
K/W
K/W
TYPE
NUMBER
REVERSE
BREAKDOWN
VOLTAGE
TEMPERATURE
COEFFICIENT
TEST
CURRENT
CLAMPING
VOLTAGE
REVERSE CURRENT
at STAND-OFF
VOLTAGE
V
(BR)R
(V)
at I
test
S
Z
(%/K) at I
test
I
test
(mA)
V
(CL)R
(V)
at I
RSM
(A)
note 1
I
R
(
μ
A)
at V
R
(V)
MIN.
MIN.
MAX.
MAX.
MAX.
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