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參數(shù)資料
| 型號(hào)： | BZA900AVL |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Quadruple low capacitance ESD suppressor |
| 中文描述： | 四路低電容ESD抑制器 |
| 文件頁數(shù)： | 3/11頁 |
| 文件大?。?/td> | 85K |
| 代理商： | BZA900AVL |
2003 Oct 20
3
Philips Semiconductors
Product specification
Quadruple low capacitance ESD suppressor
BZA900AVL series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1.
2.
DC working current limited by P
tot(max)
.
Device mounted on standard printed-circuit board.
ESD STANDARDS COMPLIANCE
THERMAL CHARACTERISTICS
Note
1.
Solder point of common anode (pin 2).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
I
Z
I
F
I
FSM
P
tot
P
ZSM
working current
continuous forward current
non-repetitive peak forward current
total power dissipation
non repetitive peak reverse power
dissipation
storage temperature
junction temperature
electrostatic discharge
T
amb
= 25
°
C
T
amb
= 25
°
C
t
p
= 1 ms; square pulse
T
amb
= 25
°
C; note 2; see Fig.5
square pulse; t
p
= 1 ms
note 1
200
3.5
335
6
mA
mA
A
mW
W
T
stg
T
j
ESD
65
15
10
+150
150
°
C
°
C
kV
kV
IEC 61000-4-2 (contact discharge)
HBM MIL-Std 883
STANDARD
CONDITIONS
IEC 61000-4-2, level 4 (ESD)
HBM MIL-Std 883, class 3
>15 kV (air); >8 kV (contact discharge)
>4 kV
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to
ambient
thermal resistance from junction to
solder point; note 1
all diodes loaded
370
K/W
R
th j-s
one diode loaded
all diodes loaded
135
125
K/W
K/W
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