參數(shù)資料
型號(hào): BZA800A-SERIES
廠商: NXP Semiconductors N.V.
英文描述: Precision 1 A regulators
中文描述: 四人間的ESD瞬態(tài)電壓抑制器
文件頁(yè)數(shù): 3/10頁(yè)
文件大?。?/td> 149K
代理商: BZA800A-SERIES
2000 Apr 18
3
Philips Semiconductors
Preliminary specification
Quadruple ESD transient voltage suppressor
BZA800A-series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1.
DC working current limited by P
tot max
.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
I
Z
I
F
I
FSM
P
tot
P
ZSM
working current
continuous forward current
non-repetitive peak forward current t
p
= 1 ms; square pulse
total power dissipation
non repetitive peak reverse power
dissipation
BZA856A, BZA862A, BZA868A
BZA820A
storage temperature
junction temperature
T
a
= 25
°
C
T
a
= 25
°
C
note 1
200
3.75
335
mA
mA
A
mW
T
a
= 25
°
C
square pulse; t
p
= 1 ms; see Fig.3
65
24
17
+150
150
W
W
°
C
°
C
Tstg
Tj
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
T
j
= 25 °C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to
ambient
all diodes loaded
370
K/W
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V
F
I
R
forward voltage
reverse current
BZA856A
BZA862A
BZA868A
BZA820A
I
F
= 200 mA
1.3
V
V
R
= 3 V
V
R
= 4 V
V
R
= 4.3 V
V
R
= 15 V
2000
700
200
100
nA
nA
nA
nA
TYPE
WORKING VOLTAGE
V
Z
(V)
at I
Z
= 1 mA
DIFFERENTIAL
RESISTANCE
r
dif
(
)
at I
Z
= 1 mA
TEMP. COEFF.
S
Z
(mV/K)
at I
Z
= 1 mA
DIODE CAP.
C
d
(pF)
at f = 1 MHz;
V
R
= 0 V
NON-REPETITIVE PEAK
REVERSE CURRENT
I
ZSM
(A) at t
p
= 1 ms;
T
amb
= 25
°
C
MIN.
TYP.
MAX.
MAX.
TYP.
MAX.
MAX.
BZA856A
BZA862A
BZA868A
BZA820A
5.32
5.89
6.46
19
5.6
6.2
6.8
20
5.88
6.51
7.14
21
400
300
200
125
0.2
1.8
3
16
240
200
180
50
3.2
2.9
2.6
0.6
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