參數(shù)資料
型號(hào)： BZA109TS
廠商： NXP SEMICONDUCTORS
元件分類： 參考電壓二極管
英文描述： 9-fold ESD transient voltage suppressor(9迭層ESD瞬變電壓抑制器)
中文描述： 25 W, UNIDIRECTIONAL, 18 ELEMENT, SILICON, TVS DIODE, MO-150AE
封裝： PLASTIC, SSOP-20
文件頁(yè)數(shù)： 3/12頁(yè)
文件大小： 308K
代理商： BZA109TS
1997 Sep 08
3
Philips Semiconductors
Preliminary specification
9-fold ESD Transient Suppressor
BZA109TS
LIMITING VALUES (per diode)
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note to the Limiting values and Thermal characteristics
1.
Current is flowing from input to corresponding output.
2.
One or more diodes loaded.
ELECTRICAL CHARACTERISTICS (per diode)
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
Z
I
F
I
FT
I
FSM
I
ZSM
P
tot
T
stg
T
j
reverse current
forward current
feed-through current
peak forward current
peak reverse current
total power dissipation
storage temperature
junction temperature
DC; T
amb
= 25
°
C
DC; T
amb
= 25
°
C
DC; T
amb
= 25
°
C; note 1
t
p
= 1 ms; square wave
t
p
= 1 ms; square wave
T
amb
= 25
°
C; note 2
20
100
100
4.5
2.5
0.95
+150
+150
mA
mA
mA
A
A
W
°
C
°
C
65
65
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient; note 2
135
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
Z
V
F
V
ZSM
I
H
R
Z
S
Z
C
D
reverse voltage
forward voltage
reverse surge voltage
input high current
zener impedance
temperature coefficient of V
Z
input diode capacitance
I
Z
= 250
μ
A
I
F
= 100 mA
t
p
= 1 ms; I
ZSM
= 2.5 A
V
IN
= 5.25 V
I
Z
= 250
μ
A
6.4
6.8
3
7.2
1.1
10
0.5
100
200
100
V
V
V
μ
A
mV/K
pF
pF
f = 1 MHz; V
R
= 0
f = 1 MHz; V
R
= 5.25 V
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