參數(shù)資料
型號(hào): BYX135GL
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: High-voltage car ignition diode(高壓汽車點(diǎn)火二極管)
中文描述: 0.05 A, 5000 V, SILICON, SIGNAL DIODE
文件頁數(shù): 2/4頁
文件大?。?/td> 36K
代理商: BYX135GL
2000 Jan 13
2
Philips Semiconductors
Product specification
High-voltage car ignition diode
BYX135GL
FEATURES
Glass passivated
High maximum operating temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy absorption capability.
APPLICATIONS
Car ignition systems
Automotive applications with extreme temperature
requirements.
DESCRIPTION
Rugged glass package, using a high temperature alloyed
construction.
The SOD119AD is hermetically sealed and fatigue free as
coefficients of expansion of all used parts are matched.
The package is designed to be used in an insulating
medium such as resin, oil or SF6 gas.
handbook, halfpage
a
MAM420
Fig.1 Simplified outline (SOD119AD) and symbol.
Cathode indicated by a green band.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
CHARACTERISTICS
T
j
= 25
°
C; unless otherwise specified.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
V
RWM
I
F(AV)
I
RSM
repetitive peak reverse voltage
crest working reverse voltage
average forward current
non-repetitive peak reverse current
5
5
50
50
kV
kV
mA
mA
t = 100
μ
s triangular pulse;
T
j max
prior to surge
T
stg
T
j
storage temperature
junction temperature
65
+200
175
200
°
C
°
C
°
C
continuous
maximum 30 minutes
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
F
V
(BR)R
forward voltage
reverse avalanche breakdown
voltage
reverse current
I
F
= 10 mA
I
R
= 100
μ
A
6.25
7.0
8.75
9.5
V
kV
I
R
V
R
= V
RWMmax
; T
j
= 175
°
C
30
μ
A
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to
ambient
T
amb
= T
leads
; lead length = 10 mm
90
K/W
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