參數(shù)資料
型號: BYW56
廠商: Vishay Intertechnology,Inc.
英文描述: Silicon Mesa Rectifier(反向電壓1000V的臺面整流器)
中文描述: 硅梅薩整流器(反向電壓1000V的臺面整流器)
文件頁數(shù): 2/4頁
文件大小: 35K
代理商: BYW56
BYW52...BYW56
Vishay Telefunken
2 (4)
Rev. 4, 27-Sep-00
www.vishay.com
Document Number 86049
Electrical Characteristics
T
j
= 25 C
Parameter
Forward voltage
Reverse current
Test Conditions
Type
Symbol
V
F
I
R
I
R
V
(BR)
C
D
t
rr
t
rr
Q
rr
Min
Typ
0.9
0.1
5
Max
1.0
1
10
1600
Unit
V
A
A
V
pF
I
F
=1A
V
R
=V
RRM
V
R
=V
RRM
, T
j
=100 C
I
R
=100 A, t
p
/T=0.01, t
p
=0.3ms
V
R
=4V, f=1MHz
I
F
=0.5A, I
R
=1A, i
R
=0.25A
I
F
=1A, di/dt=5A/ s, V
R
=50V
I
F
=1A, di/dt=5A/ s
Breakdown voltage
Diode capacitance
Reverse recovery time
18
4
4
s
s
Reverse recovery charge
200
nC
Characteristics
(T
j
= 25 C unless otherwise specified)
0
0
20
40
60
80
120
R
t
l – Lead Length ( mm )
94 9101
5
10
15
25
30
20
100
l
l
T
L
=constant
Figure 1. Typ. Thermal Resistance vs. Lead Length
I
0.001
0.010
0.100
1.000
10.000
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
V
F
– Forward Voltage ( V )
16350
F
T
j
=25
°
C
T
j
=175
°
C
Figure 2. Forward Current vs. Forward Voltage
0
0.5
1.0
1.5
2.0
2.5
0
20
40
60
80 100 120 140 160 180
T
amb
– Ambient Temperature (
°
C )
16351
I
F
V
R
=V
RRM
half sinewave
R
thJA
=45K/W
l=10mm
R
thJA
=100K/W
PCB: d=25mm
Figure 3. Max. Average Forward Current vs.
Ambient Temperature
1
10
100
1000
25
50
75
100
125
150
175
T
j
– Junction Temperature (
°
C )
16352
V
R
= V
RRM
I
R
Figure 4. Reverse Current vs. Junction Temperature
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