參數(shù)資料
型號(hào): BYW55
廠(chǎng)商: NXP SEMICONDUCTORS
元件分類(lèi): 參考電壓二極管
英文描述: Controlled avalanche rectifiers(控制的雪崩整流器)
中文描述: SILICON, RECTIFIER DIODE
封裝: HERMETIC SEALED, GLASS PACKAGE-2
文件頁(yè)數(shù): 2/7頁(yè)
文件大?。?/td> 46K
代理商: BYW55
1996 Oct 03
2
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BYW54 to BYW56
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability
Available in ammo-pack.
DESCRIPTION
Rugged glass package, using a high
temperature alloyed construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
2/3 page (Datasheet)
MAM047
a
Fig.1 Simplified outline (SOD57) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
repetitive peak reverse voltage
BYW54
BYW55
BYW56
crest working reverse voltage
BYW54
BYW55
BYW56
continuous reverse voltage
BYW54
BYW55
BYW56
average forward current
600
800
1000
V
V
V
V
RWM
600
800
1000
V
V
V
V
R
600
800
1000
V
V
V
A
I
F(AV)
T
tp
= 45
°
C;
lead length = 10 mm;
averaged over any 20 ms
period; see Figs 2 and 4
T
amb
= 80
°
C; PCB mounting
(see Fig.9);
averaged over any 20 ms
period; see Figs 3 and 4
t = 10 ms half sinewave
L = 120 mH; T
j
= T
j max
prior to
surge; inductive load switched off
2.0
0.8
A
I
FSM
E
RSM
non-repetitive peak forward current
non-repetitive peak reverse avalanche
energy
storage temperature
50
20
A
mJ
T
stg
T
j
65
65
+175
°
C
°
C
junction temperature
see Fig.5
+175
相關(guān)PDF資料
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