參數(shù)資料
型號: BYW51G
廠商: 意法半導(dǎo)體
英文描述: Coaxial Cable; Impedance:75ohm; Conductor Size AWG:30; No. Strands x Strand Size:7 x 38; Jacket Material:FEP; Jacket Color:Black; Voltage Nom.:300V RoHS Compliant: Yes
中文描述: 高效快速恢復(fù)整流二極管
文件頁數(shù): 4/9頁
文件大?。?/td> 138K
代理商: BYW51G
BYW51/F/G/FP/R-200
4/9
1E-3
1E-2
1E-1
1E+0
0.1
1.0
t(s)
K=[Zth(j-c)/Rth(j-c)]
δ
= 0.5
δ
= 0.2
δ
= 0.1
Single pulse
T
δ
=tp/T
tp
Fig. 5-1:
Relative variation of thermal impedance
junction to case versus pulse duration (D
2
PAK,
TO-220AB).
1E-2
1E-1
1E+0
1E+1
0.1
1.0
t(s)
K=[Zth(j-c)/Rth(j-c)]
δ
= 0.5
δ
= 0.2
δ
= 0.1
Single pulse
T
δ
=tp/T
tp
Fig. 5-2:
Relative variation of thermal impedance
junction
to
case
versus
(ISOWATT220AB, TO-220FPAB).
pulse
duration
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.1
1.0
10.0
100.0
VFM(V)
IFM(A)
Tj=125°C
Tj=25°C
Fig. 6:
Forward voltage drop versus forward
current (maximum values, per diode).
1
10
100
200
10
20
50
100
VR(V)
C(pF)
Tj=25°C
Fig. 7:
Junction capacitance versus reverse
voltage applied (typical values, per diode).
1E-3
1E-2
1E-1
1E+0
0
10
20
30
40
50
60
70
80
t(s)
IM(A)
Tc=25°C
Tc=100°C
Tc=75°C
I
M
t
δ
=0.5
Fig.4-3:
Nonrepetitivesurgepeakforwardcurrent
versus overload duration (TO-220FPAB).
10
20
50
100
200
500
10
20
50
100
200
500
dIF/dt(A/μs)
Qrr(nC)
90Tj=125°C
Fig. 8:
Reverse recovery charges versus dI
F
/dt
(per diode).
相關(guān)PDF資料
PDF描述
BYW51G200 Coaxial Cable; Coaxial RG/U Type:6; Impedance:75ohm; Conductor Size AWG:18; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Jacket Color:Black; Leaded Process Compatible:Yes; Voltage Nom.:300V RoHS Compliant: Yes
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參數(shù)描述
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BYW51G-200-TR 功能描述:整流器 2X10 Amp 200 Volt RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
BYW51R-200 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
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