參數(shù)資料
型號: BYW29FP-200
廠商: 意法半導體
英文描述: HIGH EFFICIENCY FAST RECOVERY DIODES
中文描述: 高效快速恢復二極管
文件頁數(shù): 2/7頁
文件大小: 121K
代理商: BYW29FP-200
BYW29/F/FP/G-200
2/7
Symbol
Parameter
Value
Unit
Rth (j-c)
Junction to case thermal resistance
TO-220AC
D2PAK
2.8
°
C/W
ISOWATT220AC
5
TO-220FPAC
5.5
THERMAL RESISTANCE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage current
V
R
= V
RRM
T
j
= 25°C
10
μ
A
T
j
= 100
°
C
0.6
mA
V
F **
Forward voltage drop
I
F
= 5 A
T
j
= 125
°
C
0.85
V
I
F
= 10 A
T
j
= 125
°
C
1.05
I
F
= 10 A
T
j
= 25
°
C
1.15
Pulse test :
* tp = 5 ms, duty cycle < 2 %
** tp = 380
μ
s, duty cycle < 2 %
To evaluate the conduction losses use the following equation :
P = 0.65 x I
F(AV)
+ 0.040 I
F2(RMS)
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
rr
Reverse recovery
time
T
j
= 25°C
Irr = 0.25 A
I
F
= 0.5A
I
R
= 1A
25
ns
T
j
= 25
°
C
dI
F
/dt = -50A/
μ
s
I
F
= 1A
V
R
=
30V
35
t
fr
Forward recovery
time
T
j
= 25
°
C
dI
F
/dt = 100A/
μ
s
V
FR
= 1.1 x V
F
max
I
F
= 1A
15
ns
V
FP
Peak forward
voltage
T
j
= 25
°
C
dI
F
/dt = 100A/
μ
s
I
F
= 1A
2
V
RECOVERY CHARACTERISTICS
相關(guān)PDF資料
PDF描述
BYW29 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
BYW29200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
BYW29F-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
BYW29-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
BYW29G200 HIGH EFFICIENCY FAST RECOVERY DIODES
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BYW29FSERIES 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Rectifier diodes ultrafast
BYW29G200 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH EFFICIENCY FAST RECOVERY DIODES
BYW29G-200 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH EFFICIENCY FAST RECOVERY DIODES
BYW29G-200-TR 功能描述:整流器 8.0 Amp 200 Volt RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
BYW31-100 制造商:n/a 功能描述:Power Semiconductor