參數(shù)資料
型號(hào): BYW29ED-150
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Rectifier diodes ultrafast, rugged
中文描述: 8 A, 150 V, SILICON, RECTIFIER DIODE
封裝: PLASTIC PACKAGE-3
文件頁(yè)數(shù): 2/8頁(yè)
文件大?。?/td> 59K
代理商: BYW29ED-150
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYW29EB, BYW29ED series
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge
capacitor voltage
Human body model;
C = 250 pF; R = 1.5 k
-
8
kV
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
Thermal resistance junction
to mounting base
R
th j-a
Thermal resistance junction
to ambient
CONDITIONS
MIN.
-
TYP. MAX. UNIT
-
2.7
K/W
SOT404 and SOT428 packages, pcb
mounted, minimum footprint, FR4 board
-
50
-
K/W
ELECTRICAL CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL PARAMETER
V
F
Forward voltage
CONDITIONS
I
F
= 8 A; T
j
= 150C
I
F
= 8 A
I
F
= 20 A
V
R
= V
RWM
V
= V
; T
j
= 100C
I
F
= 2 A; V
R
30 V; -dI
F
/dt = 20 A/
μ
s
I
F
= 1 A; V
30 V; -dI
F
/dt = 100 A/
μ
s
I
F
= 0.5 A to I
= 1 A; I
rec
= 0.25 A
I
F
= 1 A; dI
F
/dt = 10 A/
μ
s
MIN.
-
-
-
-
-
-
TYP. MAX. UNIT
0.8
0.895
0.92
1.05
1.1
1.3
2
10
0.2
0.6
4
11
20
25
15
20
1
-
V
V
V
μ
A
mA
nC
ns
ns
V
I
R
Reverse current
Q
rr
t
rr1
t
rr2
V
fr
Reverse recovered charge
Reverse recovery time
Reverse recovery time
Forward recovery voltage
-
-
November 1998
2
Rev 1.300
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相關(guān)代理商/技術(shù)參數(shù)
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BYW29ED-150/T3 制造商:NXP Semiconductors 功能描述:
BYW29ED-200 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Rectifier diodes ultrafast, rugged
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BYW29ED-200,118 功能描述:整流器 TAPE13 REC-EPI RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
BYW29EDSERIES 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Rectifier diodes ultrafast. rugged