參數(shù)資料
型號: BYW29EB
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Rectifier diodes ultrafast, rugged
中文描述: 8 A, 200 V, SILICON, RECTIFIER DIODE
文件頁數(shù): 3/8頁
文件大?。?/td> 59K
代理商: BYW29EB
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYW29EB, BYW29ED series
Fig.1. Definition of t
rr1
, Q
s
and I
rrm
Fig.2. Definition of V
fr
Fig.3. Circuit schematic for t
rr2
Fig.4. Definition of t
rr2
Fig.5. Maximum forward dissipation P
F
= f(I
);
square current waveform where I
F(AV)
=I
F(RMS)
x
D.
Fig.6. Maximum forward dissipation P
= f(I
);
sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Qs
100%
10%
time
dI
dt
F
IR
IF
Irrm
trr
R
rec
I
= 0.25A
0A
trr2
0.5A
IF
IR
time
time
VF
Vfr
VF
IF
0
2
4
6
8
10
12
0
2
4
6
8
10
12
D = 1.0
0.5
0.2
0.1
BYW29
IF(AV) / A
PF / W
D =
t
p
t
p
T
T
t
I
Tmb(max) / C
150
143
136
129
122
115
108
Vo = 0.791 V
Rs = 0.013 Ohms
shunt
Current
to ’scope
D.U.T.
Voltage Pulse Source
R
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
a = 1.57
1.9
2.2
2.8
4
BYW29
IF(AV) / A
PF / W
Tmb(max) / C
150
146.5
143
139.5
136
132.5
129
125.5
122
Vo = 0.791 V
Rs = 0.013 Ohms
November 1998
3
Rev 1.300
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