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參數(shù)資料
| 型號(hào)： | BYW27-50 |
| 廠商： | Electronics Industry Public Company Limited |
| 英文描述： | SILICON RECTIFIERS |
| 中文描述： | 硅整流 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 189K |
| 代理商： | BYW27-50 |
1
) Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschludrhte in 10 mm Abstand von Gehuse auf Umgebungstemperatur gehalten werden
56
28.02.2002
BYW 27-50 ... BYW 27-1000
Silicon Rectifiers
Silizium Gleichrichter
Nominal current – Nennstrom
1 A
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
50…1000 V
Plastic case
Kunststoffgehuse
DO-41
DO-204AL
Weight approx. – Gewicht ca.
0.4 g
Plastic material has UL classification 94V-0
Gehusematerial UL94V-0 klassifiziert
Dimensions / Mae in mm
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
see page 16
siehe Seite 16
Maximum ratings
Grenzwerte
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
V
RRM
[V]
50
100
200
400
600
800
1000
Surge peak reverse voltage
Stospitzensperrspannung
V
RSM
[V]
50
100
200
400
600
800
1000
BYW 27-50
BYW 27-100
BYW 27-200
BYW 27-400
BYW 27-600
BYW 27-800
BYW 27-1000
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
T
A
= 75 C
T
A
= 100 C
I
FAV
I
FAV
1 A
1
)
0.75 A
1
)
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
I
FRM
10 A
1
)
Peak forward surge current, 50 Hz half sine-wave
Stostrom für eine 50 Hz Sinus-Halbwelle
T
A
= 25 C
I
FSM
50 A
Rating for fusing – Grenzlastintegral, t < 10 ms
T
A
= 25 C
i
2
t
12.5 A
2
s
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
T
j
T
S
– 50…+175 C
– 50…+175 C
5
6
±
0.1
2.6
-
±0.05
0.8
T
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| BYW27-50_05 | 制造商:EIC 制造商全稱:EIC discrete Semiconductors 功能描述:SILICON RECTIFIER DIODES |
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