參數(shù)資料
型號: BYV99
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Hook-Up Wire; Conductor Size AWG:22; No. Strands x Strand Size:7 x 30; Jacket Color:Light Blue; Approval Bodies:UL; Approval Categories:UL AWM Style 1213; Passes VW-1 Flame Test; Cable/Wire MIL SPEC:MIL-W-16878/4 Type E RoHS Compliant: Yes
中文描述: 0.55 A, 600 V, SILICON, SIGNAL DIODE
封裝: HERMETIC SEALED, GLASS PACKAGE-2
文件頁數(shù): 2/8頁
文件大?。?/td> 53K
代理商: BYV99
1996 Feb 19
2
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifier
BYV99
FEATURES
Glass passivated
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability
Available in ammo-pack.
DESCRIPTION
Rugged glass SOD57 package, using
a high temperature alloyed
construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
Fig.1 Simplified outline (SOD57) and symbol.
2/3 page (Datasheet)
MAM047
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
V
R
I
F(AV)
repetitive peak reverse voltage
continuous reverse voltage
average forward current
600
600
1.00
V
V
A
T
tp
= 50
°
C; lead length = 10 mm
see Fig. 2;
averaged over any 20 ms period;
see also Fig. 6
T
amb
= 60
°
C; PCB mounting (see
Fig.10); see Fig. 3;
averaged over any 20 ms period;
see also Fig. 6
T
tp
= 50
°
C; see Fig. 4
T
amb
= 60
°
C; see Fig. 5
t = 10 ms half sine wave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
L = 120 mH; T
j
= T
j max
prior to
surge; inductive load switched off
0.55
A
I
FRM
repetitive peak forward current
9
5
20
A
A
A
I
FSM
non-repetitive peak forward current
E
RSM
non-repetitive peak reverse
avalanche energy
storage temperature
junction temperature
10
mJ
T
stg
T
j
65
65
+175
+150
°
C
°
C
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