參數(shù)資料
型號(hào): BYV74-300
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Hook-Up Wire; Conductor Size AWG:22; No. Strands x Strand Size:19 x 34; Jacket Color:Green; Approval Bodies:UL; Approval Categories:UL AWM Style 1213; Passes VW-1 Flame Test; Cable/Wire MIL SPEC:MIL-W-16878/4 Type E RoHS Compliant: Yes
中文描述: 30 A, 300 V, SILICON, RECTIFIER DIODE
文件頁數(shù): 2/6頁
文件大?。?/td> 41K
代理商: BYV74-300
Philips Semiconductors
Product specification
Dual rectifier diodes
ultrafast
BYV74 series
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
th j-hs
Thermal resistance junction to
heatsink
R
th j-a
Thermal resistance junction to
ambient
CONDITIONS
per diode
both diodes conducting
in free air.
MIN.
-
-
-
TYP.
-
-
45
MAX.
2.4
1.4
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
V
F
Forward voltage (per diode)
CONDITIONS
I
F
= 15 A; T
j
= 150C
I
F
= 15 A
I
F
= 30 A
V
R
= V
RRM
V
R
= V
RRM
; T
j
= 100 C
MIN.
-
-
-
-
-
TYP.
0.95
1.08
1.15
10
0.3
MAX.
1.12
1.25
1.36
50
0.8
UNIT
V
V
V
μ
A
mA
I
R
Reverse current (per diode)
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
Q
s
Reverse recovery charge (per
diode)
t
rr
Reverse recovery time (per
diode)
I
rrm
Peak reverse recovery current
(per diode)
V
fr
Forward recovery voltage (per
diode)
CONDITIONS
I
F
= 2 A to V
R
30 V;
dI
/dt = 20 A/
μ
s
I
F
= 1 A to V
30 V;
dI
/dt = 100 A/
μ
s
I
F
= 10 A to V
R
30 V;
dI
/dt = 50 A/
μ
s; T
= 100C
I
F
= 10 A; dI
F
/dt = 10 A/
μ
s
MIN.
-
TYP.
40
MAX.
60
UNIT
nC
-
50
60
ns
-
4.2
5.2
A
-
2.5
-
V
August 1996
2
Rev 1.200
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