參數(shù)資料
型號(hào): BYV44-400
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Hook-Up Wire; Conductor Size AWG:18; No. Strands x Strand Size:19 x 30; Jacket Color:White; Approval Bodies:UL; Approval Categories:UL AWM Style 1371; Passes VW-1 Flame Test; Cable/Wire MIL SPEC:MIL-W-16878/4 Type E RoHS Compliant: Yes
中文描述: 15 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AB
封裝: PLASTIC PACKAGE-3
文件頁數(shù): 2/5頁
文件大小: 45K
代理商: BYV44-400
Philips Semiconductors
Product specification
Dual rectifier diodes
ultrafast
BYV44 series
ELECTRICAL CHARACTERISTICS
characteristics are per diode at T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
V
F
Forward voltage
CONDITIONS
I
F
= 15 A; T
j
= 150C
I
F
= 15 A
I
F
= 30 A
V
R
= V
RRM
V
= V
; T
j
= 100 C
I
F
= 2 A to V
R
30 V;
dI
/dt = 20 A/
μ
s
I
F
= 1 A to V
30 V;
dI
/dt = 100 A/
μ
s
I
F
= 10 A to V
R
30 V;
dI
/dt = 50 A/
μ
s; T
= 100C
I
F
= 10 A; dI
F
/dt = 10 A/
μ
s
MIN.
-
-
-
-
-
-
TYP.
0.95
1.08
1.15
10
0.3
40
MAX.
1.12
1.25
1.36
50
0.8
60
UNIT
V
V
V
μ
A
mA
nC
I
R
Reverse current
Q
s
Reverse recovery charge
t
rr
Reverse recovery time
-
50
60
ns
I
rrm
Peak reverse recovery current
-
4.2
5.2
A
V
fr
Forward recovery voltage
-
2.5
-
V
Fig.1. Definition of t
rr
, Q
s
and I
rrm
Fig.2. Definition of V
fr
Fig.3. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; square wave where I
F(AV)
=I
F(RMS)
x
Fig.4. Maximum forward dissipation P
= f(I
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Qs
100%
10%
time
dI
dt
F
IR
IF
Irrm
trr
0
5
10
15
20
25
0
5
10
15
20
25
30
D = 1.0
0.5
0.2
0.1
BYV44
Rs = 0.0137 Ohms
IF(AV) / A
PF / W
D =
t
p
t
p
T
T
t
I
Tmb(max) / C
150
138
126
114
102
90
88
time
time
VF
Vfr
VF
IF
0
5
10
15
0
5
10
15
20
1.9
2.2
2.8
4
BYV44
IF(AV) / A
PF / W
a = 1.57
Rs = 0.0137
Vo = 0.89
Tmb(max) / C
150
138
126
114
102
October 1998
2
Rev 1.400
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