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參數(shù)資料
| 型號： | BYV42E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Hook-Up Wire; Conductor Size AWG:18; No. Strands x Strand Size:19 x 30; Jacket Color:Yellow; Approval Bodies:UL; Approval Categories:UL AWM Style 1371; Passes VW-1 Flame Test; Cable/Wire MIL SPEC:MIL-W-16878/4 Type E RoHS Compliant: Yes |
| 中文描述： | 30 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 46K |
| 代理商： | BYV42E |
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV42E, BYV42EB series
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge
capacitor voltage
Human body model;
C = 250 pF; R = 1.5 k
-
8
kV
THERMAL RESISTANCES
SYMBOL
R
th j-mb
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
per diode
both diodes
SOT78 package, in free air
SOT404 and SOT428 packages,
pcb mounted, minimum footprint,
FR4 board
MIN.
-
-
-
-
TYP.
-
-
60
50
MAX.
2.4
1.4
-
-
UNIT
K/W
K/W
K/W
K/W
R
th j-a
ELECTRICAL CHARACTERISTICS
characteristics are per diode at T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
V
F
Forward voltage
CONDITIONS
I
F
= 15 A; T
j
= 150C
I
F
= 15 A
I
F
= 30 A
V
R
= V
RWM
; T
j
= 100 C
V
= V
I
F
= 2 A; V
R
≥
30 V; -dI
F
/dt = 20 A/
μ
s
I
= 1 A; V
≥
30 V;
-dI
/dt = 100 A/
μ
s
I
F
= 0.5 A to I
= 1 A; I
rec
= 0.25 A
I
F
= 1 A; dI
F
/dt = 10 A/
μ
s
MIN.
-
-
-
-
-
-
-
TYP.
0.78
0.95
1.00
0.5
10
6
20
MAX.
0.85
1.05
1.20
1
100
15
28
UNIT
V
V
V
mA
μ
A
nC
ns
I
R
Reverse current
Q
s
t
rr1
Reverse recovery charge
Reverse recovery time
t
rr2
V
fr
Reverse recovery time
Forward recovery voltage
-
-
13
1
22
-
ns
V
July 1998
2
Rev 1.200
相關PDF資料 |
PDF描述 |
|---|---|
| BYV42 | Hook-Up Wire; Conductor Size AWG:18; No. Strands x Strand Size:19 x 30; Jacket Color:Yellow; Approval Bodies:UL; Approval Categories:UL AWM Style 1371; Passes VW-1 Flame Test; Cable/Wire MIL SPEC:MIL-W-16878/4 Type E RoHS Compliant: Yes |
| CDP65C51-4D | Telecommunication IC |
| CDP65C51-1D | Telecommunication IC |
| CDP65C51-1E | Telecommunication IC |
| CDP65C51-1M | Telecommunication IC |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BYV42E-100 | 制造商:NXP Semiconductors 功能描述: 制造商:NXP Semiconductors 功能描述:30 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| BYV42E-150 | 功能描述:整流器 RAIL REC-EPI RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| BYV42E-150,127 | 功能描述:整流器 RAIL REC-EPI RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| BYV42E-150 | 制造商:NXP Semiconductors 功能描述:DIODE ULTRA FAST 2X15A |
| BYV42E-150/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:DIODE ULTRA FAST DUAL |
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