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參數(shù)資料
| 型號： | BYV36F - 1200 V |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Fast soft-recovery controlled avalanche rectifier(快速軟恢復控制的雪崩整流器) |
| 中文描述： | 快速軟恢復控制雪崩整流器（快速軟恢復控制的雪崩整流器） |
| 文件頁數(shù)： | 3/14頁 |
| 文件大小： | 78K |
| 代理商： | BYV36F - 1200 V |
1996 Jul 01
3
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV36 series
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
I
FRM
repetitive peak forward current
BYV36A to C
BYV36D and E
BYV36F and G
repetitive peak forward current
BYV36A to C
BYV36D and E
BYV36F and G
non-repetitive peak forward current
T
tp
= 60
°
C; see Figs 8; 9 and 10
18
17
15
A
A
A
I
FRM
T
amb
= 60
°
C; see Figs 11; 12 and 13
9
8
8
A
A
A
A
I
FSM
t = 10 ms half sine wave; T
j
= T
j max
prior to surge; V
R
= V
RRMmax
L = 120 mH; T
j
= T
j max
prior to surge;
inductive load switched off
30
E
RSM
non-repetitive peak reverse
avalanche energy
storage temperature
junction temperature
10
mJ
T
stg
T
j
65
65
+175
+175
°
C
°
C
see Figs 17 and 18
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
forward voltage
BYV36A to C
BYV36D and E
BYV36F and G
forward voltage
BYV36A to C
BYV36D and E
BYV36F and G
reverse avalanche breakdown
voltage
BYV36A
BYV36B
BYV36C
BYV36D
BYV36E
BYV36F
BYV36G
reverse current
I
F
= 1 A; T
j
= T
j max
;
see Figs 19; 20 and 21
1.00
1.05
1.05
V
V
V
V
F
I
F
= 1 A;
see Figs 19; 20 and 21
1.35
1.45
1.45
V
V
V
V
(BR)R
I
R
= 0.1 mA
300
500
700
900
1100
1300
1500
V
V
V
V
V
V
V
μ
A
μ
A
I
R
V
R
= V
RRMmax
; see Fig.22
V
R
= V
RRMmax
;
T
j
= 165
°
C; see Fig.22
5
150
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
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|---|---|
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