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參數(shù)資料
| 型號： | BYV32F-200 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Rectifier diodes ultrafast, rugged |
| 中文描述： | 6 A, 200 V, SILICON, RECTIFIER DIODE |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 54K |
| 代理商： | BYV32F-200 |
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV32F, BYV32EX series
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge
capacitor voltage
Human body model;
C = 250 pF; R = 1.5 k
-
8
kV
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
R.M.S. isolation voltage from all
three terminals to external
heatsink
V
isol
Repetitive peak voltage from all
three terminals to external
heatsink
C
isol
Capacitance from pin 2 to
external heatsink
CONDITIONS
SOT186A package; f = 50-60 Hz;
sinusoidal waveform; R.H.
≤
65%;
clean and dustfree
SOT186 package; R.H.
≤
65%;
clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
-
1500
V
f = 1 MHz
-
10
-
pF
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
th j-hs
Thermal resistance junction to
heatsink (per diode)
R
th j-a
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
without heatsink compound
in free air
MIN.
-
-
-
TYP.
-
-
55
MAX.
5.0
7.0
-
UNIT
K/W
K/W
K/W
ELECTRICAL CHARACTERISTICS
characteristics are per diode at T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
V
F
Forward voltage
CONDITIONS
I
F
= 8 A; T
j
= 150C
I
F
= 20 A
V
R
= V
RWM
; T
j
= 100 C
V
= V
I
F
= 2 A; V
R
≥
30 V; -dI
F
/dt = 20 A/
μ
s
I
= 1 A; V
≥
30 V;
-dI
/dt = 100 A/
μ
s
I
F
= 0.5 A to I
= 1 A; I
rec
= 0.25 A
I
= 1 A; V
≥
30 V;
-dI
/dt = 50 A/
μ
s; T
= 100C
I
F
= 1 A; dI
F
/dt = 10 A/
μ
s
MIN.
-
-
-
-
-
-
TYP.
0.72
1.00
0.2
6
8
20
MAX.
0.85
1.15
0.6
30
12.5
25
UNIT
V
V
mA
μ
A
nC
ns
I
R
Reverse current
Q
s
t
rr1
Reverse recovery charge
Reverse recovery time
t
rr2
I
rrm
Reverse recovery time
Peak reverse recovery current
-
-
10
1.5
20
2
ns
A
V
fr
Forward recovery voltage
-
1
-
V
October 1998
2
Rev 1.300
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BYV32FSERIES | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Rectifier diodes ultrafast. rugged |
| BYV32G-200 | 制造商:NXP Semiconductors 功能描述:DIODE ULTRAFAST 2X10A 200V I2PAK 制造商:NXP Semiconductors 功能描述:DIODE, ULTRAFAST, 2X10A, 200V, I2PAK 制造商:NXP Semiconductors 功能描述:DIODE, ULTRAFAST, 2X10A, 200V, I2PAK; Diode Type:Ultrafast Recovery; Diode Configuration:Dual Common Cathode; Repetitive Reverse Voltage Vrrm Max:200V; Forward Current If(AV):20A; Forward Voltage VF Max:850mV; Diode Case Style:TO-262;RoHS Compliant: Yes |
| BYV32G-200,127 | 功能描述:二極管 - 通用，功率，開關(guān) DUAL ULTRAFAST PWR DIODE RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| BYV34 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Dual rectifier diodes ultrafast |
| BYV34-300 | 制造商:NXP Semiconductors 功能描述:Rectifier Diode, Common Cathode, 300 Volt, TO-220AB |
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