參數(shù)資料
型號： BYV32EXSERIES
廠商： NXP Semiconductors N.V.
元件分類： 基準電壓源/電流源
英文描述： 5.0 AMP POSITIVE VOLTAGE REGULATOR
中文描述： 5.0放大器正電壓穩(wěn)壓器
文件頁數(shù)： 2/7頁
文件大小： 54K
代理商： BYV32EXSERIES
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV32F, BYV32EX series
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge
capacitor voltage
Human body model;
C = 250 pF; R = 1.5 k
-
8
kV
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
R.M.S. isolation voltage from all
three terminals to external
heatsink
V
isol
Repetitive peak voltage from all
three terminals to external
heatsink
C
isol
Capacitance from pin 2 to
external heatsink
CONDITIONS
SOT186A package; f = 50-60 Hz;
sinusoidal waveform; R.H.
≤
65%;
clean and dustfree
SOT186 package; R.H.
≤
65%;
clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
-
1500
V
f = 1 MHz
-
10
-
pF
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
th j-hs
Thermal resistance junction to
heatsink (per diode)
R
th j-a
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
without heatsink compound
in free air
MIN.
-
-
-
TYP.
-
-
55
MAX.
5.0
7.0
-
UNIT
K/W
K/W
K/W
ELECTRICAL CHARACTERISTICS
characteristics are per diode at T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
V
F
Forward voltage
CONDITIONS
I
F
= 8 A; T
j
= 150C
I
F
= 20 A
V
R
= V
RWM
; T
j
= 100 C
V
= V
I
F
= 2 A; V
R
≥
30 V; -dI
F
/dt = 20 A/
μ
s
I
= 1 A; V
≥
30 V;
-dI
/dt = 100 A/
μ
s
I
F
= 0.5 A to I
= 1 A; I
rec
= 0.25 A
I
= 1 A; V
≥
30 V;
-dI
/dt = 50 A/
μ
s; T
= 100C
I
F
= 1 A; dI
F
/dt = 10 A/
μ
s
MIN.
-
-
-
-
-
-
TYP.
0.72
1.00
0.2
6
8
20
MAX.
0.85
1.15
0.6
30
12.5
25
UNIT
V
V
mA
μ
A
nC
ns
I
R
Reverse current
Q
s
t
rr1
Reverse recovery charge
Reverse recovery time
t
rr2
I
rrm
Reverse recovery time
Peak reverse recovery current
-
-
10
1.5
20
2
ns
A
V
fr
Forward recovery voltage
-
1
-
V
October 1998
2
Rev 1.300
相關(guān)PDF資料
PDF描述
BYV32FSERIES 5.0 AMP POSITIVE VOLTAGE REGULATOR
BYV32EX-150 Rectifier diodes ultrafast, rugged
BYV34-300M Hermetically Sealed Dual Fast Recovery Silicon Rectifier For HI-REL Application(氣密封裝的快速恢復(fù)雙硅整流器(HI-REL應(yīng)用))
BYV34-400M Hermetically Sealed Dual Fast Recovery Silicon Rectifier For HI-REL Application(氣密封裝的快速恢復(fù)雙硅整流器(HI-REL應(yīng)用))
BYV34-500M Hermetically Sealed Dual Fast Recovery Silicon Rectifier For HI-REL Application(氣密封裝的快速恢復(fù)雙硅整流器(HI-REL應(yīng)用))
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BYV32F 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Rectifier diodes ultrafast, rugged
BYV32F-150 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Rectifier diodes ultrafast, rugged
BYV32F-200 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Rectifier diodes ultrafast, rugged
BYV32FSERIES 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Rectifier diodes ultrafast. rugged
BYV32G-200 制造商:NXP Semiconductors 功能描述:DIODE ULTRAFAST 2X10A 200V I2PAK 制造商:NXP Semiconductors 功能描述:DIODE, ULTRAFAST, 2X10A, 200V, I2PAK 制造商:NXP Semiconductors 功能描述:DIODE, ULTRAFAST, 2X10A, 200V, I2PAK; Diode Type:Ultrafast Recovery; Diode Configuration:Dual Common Cathode; Repetitive Reverse Voltage Vrrm Max:200V; Forward Current If(AV):20A; Forward Voltage VF Max:850mV; Diode Case Style:TO-262;RoHS Compliant: Yes
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