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| 型號(hào)： | BYV29XSERIES |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | 1.5 A low drop positive voltage regulator adjustable and fixed |
| 中文描述： | 整流二極管超快 |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 52K |
| 代理商： | BYV29XSERIES |
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYV29F, BYV29X series
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL PARAMETER
V
isol
Peak isolation voltage from
all terminals to external
heatsink
V
isol
R.M.S. isolation voltage from SOD113 package; f = 50-60 Hz;
all terminals to external
heatsink
C
isol
Capacitance from pin 2 to
external heatsink
CONDITIONS
SOD100 package; R.H.
≤
65%; clean and
dustfree
MIN.
-
TYP. MAX. UNIT
-
1500
V
-
-
2500
V
sinusoidal waveform; R.H.
≤
65%; clean
and dustfree
f = 1 MHz
-
10
-
pF
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
th j-hs
Thermal resistance junction to
heatsink
R
th j-a
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
without heatsink compound
in free air.
MIN.
-
-
-
TYP.
-
-
55
MAX.
5.5
7.2
-
UNIT
K/W
K/W
K/W
ELECTRICAL CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
V
F
Forward voltage
CONDITIONS
I
F
= 8 A; T
j
= 150C
I
F
= 8 A
I
F
= 20 A
V
R
= V
RRM
V
= V
; T
j
= 100 C
I
F
= 2 A to V
R
≥
30 V;
dI
/dt = 20 A/
μ
s
I
F
= 1 A to V
≥
30 V;
dI
/dt = 100 A/
μ
s
I
F
= 10 A to V
R
≥
30 V;
dI
/dt = 50 A/
μ
s; T
= 100C
I
F
= 10 A; dI
F
/dt = 10 A/
μ
s
MIN.
-
-
-
-
-
-
TYP.
0.90
1.05
1.20
2.0
0.1
40
MAX.
1.03
1.25
1.40
50
0.35
60
UNIT
V
V
V
μ
A
mA
nC
I
R
Reverse current
Q
s
Reverse recovery charge
t
rr
Reverse recovery time
-
50
60
ns
I
rrm
Peak reverse recovery current
-
4.0
5.5
A
V
fr
Forward recovery voltage
-
2.5
-
V
February 1999
2
Rev 1.400
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