參數(shù)資料
型號: BYV29-300
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Rectifier diodes ultrafast(超快速整流二極管)
中文描述: 9 A, 300 V, SILICON, RECTIFIER DIODE, TO-220AC
封裝: PLASTIC PACKAGE-2
文件頁數(shù): 1/5頁
文件大?。?/td> 42K
代理商: BYV29-300
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYV29 series
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
Fast switching
Soft recovery characteristic
High thermal cycling performance
Low thermal resistance
V
R
= 300 V/ 400 V/ 500 V
V
F
1.03 V
I
F(AV)
= 9 A
t
rr
60 ns
GENERAL DESCRIPTION
PINNING
SOD59 (TO220AC)
Ultra-fast, epitaxial rectifier diodes
intended for use as output rectifiers
in high frequency switched mode
power supplies.
PIN
DESCRIPTION
1
cathode
2
anode
TheBYV29series issupplied in the
conventional
leaded
(TO220AC) package.
SOD59
tab
cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
-400
400
400
400
9
UNIT
BYV29
-300
300
300
300
-500
500
500
500
V
RRM
V
RWM
V
R
I
F(AV)
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Average forward current
1
-
-
-
-
V
V
V
A
square wave;
δ
= 0.5;
T
123 C
I
FRM
Repetitive peak forward current t = 25
μ
s;
δ
= 0.5;
-
18
A
T
123 C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
V
RRM(max)
I
FSM
Non-repetitive peak forward
current.
-
-
100
110
A
A
T
stg
T
j
Storage temperature
Operating junction temperature
-40
-
150
150
C
C
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
th j-mb
Thermal resistance junction to
mounting base
R
th j-a
Thermal resistance junction to
ambient
CONDITIONS
MIN.
-
TYP.
-
MAX.
2.5
UNIT
K/W
in free air.
-
60
-
K/W
k
1
a
2
1
tab
2
1
Neglecting switching and reverse current losses.
September 1998
1
Rev 1.300
相關(guān)PDF資料
PDF描述
BYV29 Rectifier diodes ultrafast
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BYV29-400SMD 1.5 A low drop positive voltage regulator adjustable and fixed
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