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參數(shù)資料
| 型號(hào)： | BYV26G |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80% |
| 中文描述： | 0.68 A, 1400 V, SILICON, SIGNAL DIODE |
| 封裝： | HERMETIC SEALED, GLASS, SOD-57, 2 PIN |
| 文件頁(yè)數(shù)： | 3/12頁(yè) |
| 文件大?。?/td> | 74K |
| 代理商： | BYV26G |
1996 May 30
3
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV26 series
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
I
FRM
repetitive peak forward current
BYV26A to E
BYV26F and G
non-repetitive peak forward current
T
amb
= 60
°
C; see Figs 8 and 9
6.0
6.4
30
A
A
A
I
FSM
t = 10 ms half sine wave; T
j
= T
j max
prior to surge; V
R
= V
RRMmax
I
R
= 400 mA; T
j
= T
j max
prior to
surge; inductive load switched off
E
RSM
non-repetitive peak reverse
avalanche energy
storage temperature
junction temperature
10
mJ
T
stg
T
j
65
65
+175
+175
°
C
°
C
see Figs 12 and 13
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
forward voltage
BYV26A to E
BYV26F and G
forward voltage
BYV26A to E
BYV26F and G
reverse avalanche breakdown
voltage
BYV26A
BYV26B
BYV26C
BYV26D
BYV26E
BYV26F
BYV26G
reverse current
I
F
= 1 A; T
j
= T
j max
;
see Figs 14 and 15
1.3
1.3
V
V
V
F
I
F
= 1 A;
see Figs 14 and 15
2.50
2.15
V
V
V
(BR)R
I
R
= 0.1 mA
300
500
700
900
1100
1300
1500
V
V
V
V
V
V
V
μ
A
μ
A
I
R
V
R
= V
RRMmax
; see Fig.16
V
R
= V
RRMmax
;
T
j
= 165
°
C; see Fig.16
when switched from
I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A;
see Fig.20
5
150
t
rr
reverse recovery time
BYV26A to C
BYV26D and E
BYV26F and G
diode capacitance
BYV26A to C
BYV26D and E
BYV26F and G
30
75
ns
ns
ns
150
C
d
f = 1 MHz; V
R
= 0 V;
see Figs 17 and 18
45
40
35
pF
pF
pF
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
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