參數(shù)資料
型號： BYV2100
廠商： NXP SEMICONDUCTORS
元件分類： 參考電壓二極管
英文描述： Hook-Up Wire; Conductor Size AWG:16; No. Strands x Strand Size:19 x 29; Jacket Color:Black; Approval Bodies:UL; Approval Categories:UL AWM Style 1371; Passes VW-1 Flame Test; Cable/Wire MIL SPEC:MIL-W-16878/4 Type E RoHS Compliant: Yes
中文描述： 1.3 A, 100 V, SILICON, RECTIFIER DIODE
封裝： HERMETIC SEALED, GLASS PACKAGE-2
文件頁數(shù)： 3/8頁
文件大?。?/td> 52K
代理商： BYV2100
1996 Oct 07
3
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifier
BYV2100
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1.
Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥
40
μ
m, see Fig.12.
For more information please refer to the “General Part of associated Handbook”
SYMBOL
PARAMETER
CONDITIONS
MIN.
120
TYP.
MAX.
UNIT
V
F
forward voltage
I
F
= 2 A; T
j
= T
j max
; see Fig.5
I
F
= 2 A; see Fig.5
I
R
= 0.1 mA
0.78
0.98
V
V
V
V
(BR)R
reverse avalanche
breakdown voltage
reverse current
I
R
V
R
= V
RRMmax
;
see Fig.8
V
R
= V
RRMmax
; T
j
= 165
°
C;
see Fig.8
when switched from I
F
= 0.5 A
to I
R
= 1 A; measured at
I
R
= 0.25 A; see Fig.10
f = 1 MHz; V
R
= 0 V; see Fig.9
when switched from
I
F
= 1 A to V
R
≥
30 V and
dI
F
/dt =
1 A/
μ
s; see Fig.11
5
μ
A
150
μ
A
t
rr
reverse recovery time
12.5
ns
C
d
dI
R
dt
diode capacitance
maximum slope of reverse
recovery current
135
pF
A/
μ
s
2
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
R
th j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
46
100
K/W
K/W
--------
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