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參數(shù)資料
| 型號： | BYV160 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Ultra fast low-loss rectifier |
| 中文描述： | 2 A, 600 V, SILICON, RECTIFIER DIODE |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 65K |
| 代理商： | BYV160 |
2000 Feb 01
2
Philips Semiconductors
Product specification
Ultra fast low-loss rectifier
BYV160
FEATURES
Glass passivated
High maximum operating temperature
Low leakage current
Excellent stability
Available in ammo-pack.
DESCRIPTION
Rugged glass SOD57 package, using a high temperature
alloyed construction.
This package is hermetically sealed and fatigue free as
coefficients of expansion of all used parts are matched.
3 page (Datasheet)
MAM047
a
Fig.1 Simplified outline (SOD57) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
V
R
I
F(AV)
repetitive peak reverse voltage
continuous reverse voltage
average forward current
600
600
2
V
V
A
T
tp
= 60
°
C; lead length = 10 mm;
see Fig.5;
averaged over any 20 ms period;
see Fig.6
t = 10 ms half sine wave;
T
j
= 25
°
C; V
R
= V
RRMmax
I
FSM
non-repetitive peak forward current
40
A
T
stg
T
j
storage temperature
junction temperature
65
65
+175
+175
°
C
°
C
see Fig.7
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V
F
forward voltage
I
F
= 2 A; T
j
= T
j max
; see Fig.2
I
F
= 2 A; see Fig.2
V
R
= V
RRMmax
; see Fig.3
V
R
= V
RRMmax
; T
j
= 150
°
C; see Fig.3
when switched from I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A
1.00
1.20
5
150
50
V
V
μ
A
μ
A
ns
I
R
reverse current
t
rr
reverse recovery time
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