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參數(shù)資料
| 型號： | BYV118X |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Rectifier diodes Schottky barrier |
| 中文描述： | 肖特基整流二極管 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 42K |
| 代理商： | BYV118X |
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
BYV118F, BYV118X series
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL PARAMETER
V
isol
Peak isolation voltage from
all terminals to external
heatsink
V
isol
R.M.S. isolation voltage from SOT186A package; f = 50-60 Hz;
all terminals to external
heatsink
C
isol
Capacitance from pin 2 to
external heatsink
CONDITIONS
SOT186 package; R.H.
≤
65%; clean and
dustfree
MIN.
-
TYP. MAX. UNIT
-
1500
V
-
-
2500
V
sinusoidal waveform; R.H.
≤
65%; clean
and dustfree
f = 1 MHz
-
10
-
pF
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-hs
Thermal resistance junction
to heatsink
CONDITIONS
per diode
both diodes
(with heatsink compound)
in free air
MIN.
-
-
TYP. MAX. UNIT
-
6.5
-
5.5
K/W
K/W
R
th j-a
Thermal resistance junction
to ambient
-
55
-
K/W
ELECTRICAL CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL PARAMETER
V
F
Forward voltage
CONDITIONS
I
F
= 5 A; T
j
= 125C
I
F
= 10 A
V
R
= V
RWM
V
R
= V
; T
= 100C
V
R
= 5 V; f = 1 MHz, T
j
= 25C to 125C
MIN.
-
-
-
-
-
TYP. MAX. UNIT
0.52
0.6
0.72
0.87
0.06
0.5
6
15
155
-
V
V
I
R
Reverse current
mA
mA
pF
C
d
Junction capacitance
May 1998
2
Rev 1.100
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| BYV118X-35 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Rectifier diodes Schottky barrier |
| BYV118X-40 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Rectifier diodes Schottky barrier |
| BYV118X-45 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Rectifier diodes Schottky barrier |
| BYV12 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Fast Avalanche Sinterglass Diode |
| BYV12_10 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Fast Avalanche Sinterglass Diode |
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