參數資料
型號: BYV116B-20
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Hook-Up Wire; Conductor Size AWG:22; No. Strands x Strand Size:19 x 34; Jacket Color:Yellow; Approval Bodies:UL; Approval Categories:UL AWM Style 1180; Passes VW-1 Flame Test; Cable/Wire MIL SPEC:MIL-W-16878/5 Type EE RoHS Compliant: Yes
中文描述: 5 A, 20 V, SILICON, RECTIFIER DIODE
封裝: PLASTIC PACKAGE-3
文件頁數: 3/6頁
文件大?。?/td> 53K
代理商: BYV116B-20
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
BYV116, BYV116B series
Fig.1. Maximum forward dissipation P
= f(I
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
D.
Fig.2. Maximum forward dissipation P
= f(I
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Fig.3. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.4. Typical reverse leakage current per diode;
I
R
= f(V
R
); parameter T
j
Fig.5. Typical junction capacitance per diode;
C
d
= f(V
R
); f = 1 MHz; T
j
= 25C to 125 C.
Fig.6. Transient thermal impedance; per diode;
Z
th j-mb
= f(t
p
).
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
D = 1.0
0.5
0.2
0.1
BYV116
Rs = 0.046 Ohms
Vo = 0.31 V
Average forward current, IF(AV) (A)
Forward dissipation, PF (W)
T
I
D =
t
p
t
p
T
t
Tmb(max) / C
150
146
142
138
134
130
0
5
10
15
20
25
1uA
10uA
100uA
1mA
10mA
100mA
BYV116
VR / V
IR / A
Tj = 25 C
50 C
75 C
100 C
125 C
150 C
0
1
Average forward current, IF(AV) (A)
2
3
4
5
0
1
2
3
4
5
a = 1.57
1.9
2.2
2.8
4
BYV116
Rs = 0.046 Ohms
Vo = 0.31 V
Forward dissipation, PF (W)
Tmb(max) / C
150
146
142
138
134
130
1
10
100
10
100
1000
BYV116
VR / V
Cd / pF
0
0.2
0.4
VF / V
0.6
0.8
1
0
2
4
6
8
10
BYV116
IF / A
Tj = 25 C
Tj = 125 C
typ
max
1us
10us
100us
1ms
10ms
100ms
1s
10s
0.001
0.01
0.1
1
10
PBYR325CTD
pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
D =
t
p
t
p
T
T
P
t
D
March 1998
3
Rev 1.000
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