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參數(shù)資料
| 型號(hào)： | BYT28SERIES |
| 英文描述： | Dual rectifier diodes ultrafast |
| 中文描述： | 雙超快速整流二極管 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大小： | 42K |
| 代理商： | BYT28SERIES |
Philips Semiconductors
Product specification
Dual rectifier diodes
ultrafast
BYT28 series
ELECTRICAL CHARACTERISTICS
characteristics are per diode at T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
V
F
Forward voltage
CONDITIONS
I
F
= 5 A; T
j
= 150C
I
F
= 10 A
V
R
= V
RRM
V
= V
; T
j
= 100 C
I
F
= 2 A to V
R
≥
30 V;
dI
/dt = 20 A/
μ
s
I
F
= 1 A to V
≥
30 V;
dI
/dt = 100 A/
μ
s
I
F
= 5 A to V
R
≥
30 V;
dI
/dt = 50 A/
μ
s; T
= 100C
I
F
= 1 A; dI
F
/dt = 10 A/
μ
s
MIN.
-
-
-
-
-
TYP.
0.95
1.30
2.0
10
50
MAX.
1.05
1.40
10
200
60
UNIT
V
V
μ
A
μ
A
nC
I
R
Reverse current
Q
s
Reverse recovery charge
t
rr
Reverse recovery time
-
50
60
ns
I
rrm
Peak reverse recovery current
-
2.0
3.0
A
V
fr
Forward recovery voltage
-
2.5
-
V
Fig.1. Definition of t
rr
, Q
s
and I
rrm
Fig.2. Definition of V
fr
Fig.3. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; square wave where I
F(AV)
=I
F(RMS)
x
Fig.4. Maximum forward dissipation P
= f(I
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Qs
100%
10%
time
dI
dt
F
IR
IF
Irrm
trr
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
9
D = 1.0
0.5
0.2
0.1
BYT28
IF(AV) / A
PF / W
Rs = 0.021 Ohms
Tmb(max) / C
150
145.5
141
132
123
114
136.5
127.5
118.5
109.5
D =
t
p
t
p
T
T
t
I
time
time
VF
Vfr
VF
IF
0
1
2
3
4
5
0
1
2
3
4
5
6
a = 1.57
1.9
2.2
2.8
4
BYT28
IF(AV) / A
PF / W
Tmb(max) / C
150
145.5
141
132
136.5
127.5
123
Vo = 0.945 V
Rs = 0.021 Ohms
October 1998
2
Rev 1.400
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