參數(shù)資料
型號： BYT16
廠商： 意法半導體
英文描述： FAST RECOVERY RECTIFIER DIODES
中文描述： 快速恢復整流二極管
文件頁數(shù)： 2/5頁
文件大?。?/td> 93K
代理商： BYT16
Symbol
V
F
*
Parameter
Forward voltage drop
Test Conditions
Tj = 25
°
C
Tj = 100
°
C
Tj = 25
°
C
Tj = 100
°
C
Min.
Typ.
Max.
1.5
1.4
15
2.5
Unit
V
I
F
= 8 A
I
R
**
Reverse leakage
current
V
R
= V
RRM
μ
A
mA
Pulse test : * tp = 380
μ
s,
δ
< 2%
** tp = 5 ms,
δ
< 2%
To evaluate the conduction losses use the following equation:
P = 1.1 x I
F(AV)
+ 0.024 I
F2(RMS)
RECOVERY CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Symbol
R
th(j-c)
Parameter
Value
3.75
2
Unit
°
C/W
Junction to case
Per diode
Total
Coupling
R
th(c)
0.25
When the diodes 1 and 2 are used simultaneously:
Tj(diode 1) = P(diode) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c)
THERMAL RESISTANCES
Symbol
t
rr
Test Conditions
I
F
= 1A V
R
= 30V dI
F
/dt = - 15A/
μ
s
I
F
= 0.5A I
R
= 1A I
rr
= 0.25A
Min.
Typ.
Max.
75
35
Unit
ns
Tj = 25°C
Symbol
t
IRM
Parameter
Test Conditions
Min. Typ. Max. Unit
Maximum reverse
recovery time
dI
F
/dt = - 32 A/
μ
s
dI
F
/dt = - 64 A/
μ
s
dI
F
/dt = - 32 A/
μ
s
dI
F
/dt = - 64 A/
μ
s
Tj = 100°C
V
CC
= 120V I
F
= I
F(AV)
dI
F
/dt = - 8A/
μ
s L
p
= 9
μ
H
(see fig. 12)
V
CC
= 200 V
I
F
= 8 A
L
p
≤
0.05
μ
H
Tj = 100°C
(see fig. 11)
75
ns
50
I
RM
Maximum reverse
recovery current
2.2
A
2.8
C = V
RP
V
CC
Turn-off overvoltage
coefficient
3.3
/
TURN-OFF SWITCHING CHARACTERISTICS
Fig. 1:
Low frequency power losses versus
average current.
Fig. 2:
Peak current versus form factor.
BYT16P-400
2/5
相關PDF資料
PDF描述
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相關代理商/技術參數(shù)
參數(shù)描述
BYT16P 制造商:未知廠家 制造商全稱:未知廠家 功能描述:FAST RECOVERY RECTIFIER DIODES
BYT16P-400 功能描述:整流器 16 Amp 400 Volt RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
BYT16P-400 制造商:STMicroelectronics 功能描述:DIODE FAST RECOVERY 2X8A
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