參數(shù)資料
型號(hào): BYT 12P-1000
廠商: 意法半導(dǎo)體
英文描述: Fast Recovery Rectifier Diode(快速恢復(fù)整流二極管)
中文描述: 快恢復(fù)整流二極管(快速恢復(fù)整流二極管)
文件頁(yè)數(shù): 2/5頁(yè)
文件大小: 96K
代理商: BYT 12P-1000
2/5
Synbol
Test Conditions
Min.
Typ.
Max.
Unit
I
R
T
j
= 25
°
C
V
R
= V
RRM
50
μ
A
T
j
= 100
°
C
2.5
mA
V
F
T
j
= 25
°
C
I
F
= 12A
1.9
V
T
j
= 100
°
C
1.8
STATIC CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
t
rr
T
j
= 25
°
C
I
F
= 1A di
F
/dt = - 15A/
μ
s V
R
= 30V
155
ns
I
F
= 0.5A I
R
= 1A I
rr
= 0.25A
65
RECOVERY CHARACTERISTICS
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
t
IRM
di
F
/dt = - 50A/
μ
s
V
CC
= 200 V I
F
= 12A
L
p
0.05
μ
H T
j
= 100
°
C
See figure 11
200
ns
di
F
/dt = - 100A/
μ
s
120
I
RM
di
F
/dt = -50A/
μ
s
7.8
A
di
F
/dt = - 100A/
μ
s
9
TURN-OFF SWITCHING CHARACTERISTICS (Without Series Inductance)
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
C = V
RP
V
CC
T
j
= 100
°
C V
CC
= 200V I
F
= I
F (AV)
di
F
/dt = - 12A/
μ
s L
p
= 12
μ
H See figure 12
4.5
TURN-OFF OVERVOLTAGE COEFFICIENT (With Series Inductance)
To evaluate the conduction losses use the following equations:
V
F
= 1.47 + 0.026 I
F
P = 1.47 x IF
(AV)
+ 0.026 I
F2(RMS)
Figure 1. Low frequency power losses versus
average current
Figure 2. Peak current versus form factor
BYT 12P-1000
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