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參數(shù)資料
| 型號(hào)： | BYS13-90 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | ESD Safe ? High Voltage Power Schottky ? Rectifier |
| 中文描述： | 防靜電安全？高壓功率肖特基？整流器 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 73K |
| 代理商： | BYS13-90 |
BYS13–90
Vishay
Semiconductors
1 (4)
Rev. 4, 25-Sep-00
www.vishay.com
Document Number 86065
ESD Safe – High Voltage Power Schottky – Rectifier
Features
High efficiency
Low forward voltage drop
Negligible switching losses
Low reverse current
High reverse surge capability
High ESD capability
Applications
High frequency SMPS
Free wheeling diode in low voltage converters
15 811
Absolute Maximum Ratings
T
j
= 25 C
Parameter
Repeptive peak reverse voltage
Continuous reverse voltage
Average forward current
Non–repeptive surge forward current
ESD – IEC 1000–4–2
Junction and storage temperature range
Test Conditions
Type
Symbol
V
RRM
V
R
I
FAV
I
FSM
ESD
T
j
=T
stg
Value
90
90
1.5
75
20
–55...+150
Unit
V
V
A
A
kV
C
T
j
=76 C, V
R
= 90V
t
p
=10ms, half sinewave
R = 330 , C = 150pF
Maximum Thermal Resistance
T
j
= 25 C
Parameter
Junction lead
T
L
=constant
Junction ambient
Epoxy–glass hard tissue (see figure 1) 35 m * 17mm
2
copper area per electrode
Epoxy–glass hard tissue (see figure 2) 35 m * 50mm
2
copper area per electrode
Test Conditions
Symbol
R
thJL
R
thJA
Value
25
150
Unit
K/W
K/W
125
Electrical Characteristics
T
j
= 25 C
Parameter
Test Conditions
I
F
=100mA
I
F
=3A
I
F
=3A T
j
= 100 C
V
R
=V
RRM
V
R
=V
RRM
, T
j
=100 C
V
R
=4V, f = 1MHz
Type
Symbol
Min
Typ
Max
430
950
850
30
5
Unit
Forward voltage
V
850
700
mV
F
Reverse current
I
R
A
mA
pF
Junction Capacitance
C
D
130
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|---|---|
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