參數(shù)資料
型號: BYR29F
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Rectifier diodes ultrafast
中文描述: 8 A, 800 V, SILICON, RECTIFIER DIODE
文件頁數(shù): 3/6頁
文件大小: 45K
代理商: BYR29F
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYR29F series
Fig.1. Definition of t
rr
, Q
s
and I
rrm
Fig.2. Definition of V
fr
Fig.3. Maximum forward dissipation P
= f(I
F(AV)
);
square wave where I
F(AV)
=I
F(RMS)
x
D.
Fig.4. Maximum forward dissipation P
= f(I
);
sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Fig.5. Maximum permissible rms current I
F(RMS)
versus
pulse width.
Fig.6. Maximum t
rr
at T
j
= 25C and 100C.
Qs
100%
10%
time
dI
dt
F
IR
IF
Irrm
trr
0
1
2
3
4
5
6
7
8
0
5
10
15
a = 1.57
1.9
2.2
2.8
4
BYR29
IF(AV) / A
PF / W
Vo = 1.26 V
Ths(max) / C
150
106
73
139
84
128
117
95
Rs = 0.03 Ohms
time
time
VF
Vfr
VF
IF
0
100us
1ms
tp / s
10ms
100ms
2
4
6
8
10
12
BT134W
IF(RMS) / A
0
2
4
6
8
10
12
0
5
10
15
20
D = 1.0
0.5
0.2
0.1
BYR29
IF(AV) / A
PF / W
Ths(max) / C
150
122.5
95
40
67.5
Vo = 1.26 V
Rs = 0.03 Ohms
D =
t
p
t
p
T
T
t
I
1
10
trr / ns
1
10
100
1000
100
dIF/dt (A/us)
1A
IF=10 A
Tj = 25 C
Tj = 100 C
September 1998
3
Rev 1.400
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