參數(shù)資料
型號: BYQ30ED-200
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Rectifier diodes ultrafast, rugged
中文描述: 8 A, 200 V, SILICON, RECTIFIER DIODE
封裝: PLASTIC PACKAGE-3
文件頁數(shù): 2/8頁
文件大小: 62K
代理商: BYQ30ED-200
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYQ30E, BYQ30EB, BYQ30ED series
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge
capacitor voltage
Human body model;
C = 250 pF; R = 1.5 k
-
8
kV
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
Thermal resistance junction
to mounting base
R
th j-a
Thermal resistance junction
to ambient
CONDITIONS
per diode
both diodes
SOT78 package, in free air
SOT404 and SOT428 packages, pcb
mounted, minimum footprint, FR4 board
MIN.
-
-
-
-
TYP. MAX. UNIT
-
3
-
2.5
60
-
50
-
K/W
K/W
K/W
K/W
ELECTRICAL CHARACTERISTICS
All characteristics are per diode at T
j
= 25 C unless otherwise specified
SYMBOL PARAMETER
V
F
Forward voltage
CONDITIONS
I
F
= 8 A; T
j
= 150C
I
F
= 16 A; T
j
= 150C
I
F
= 16 A
V
R
= V
RWM
V
= V
; T
j
= 100C
I
F
= 2 A; V
R
30 V; -dI
F
/dt = 20 A/
μ
s
I
F
= 1 A; V
30 V; -dI
F
/dt = 100 A/
μ
s
I
F
= 0.5 A to I
= 1 A; I
rec
= 0.25 A
I
F
= 1 A; dI
F
/dt = 10 A/
μ
s
MIN.
-
-
-
-
-
-
TYP. MAX. UNIT
0.84
0.95
1
1.15
1.12
1.25
4
30
0.3
0.6
4
11
20
25
12
22
1
-
V
V
V
μ
A
mA
nC
ns
ns
V
I
R
Reverse current
Q
rr
t
rr1
t
rr2
V
fr
Reverse recovered charge
Reverse recovery time
Reverse recovery time
Forward recovery voltage
-
-
October 1998
2
Rev 1.200
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