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參數(shù)資料
| 型號： | BYQ28X-150 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SERVSWITCH EXPANSION CBL COAX, 50FT, DB25 |
| 中文描述： | 10 A, 150 V, SILICON, RECTIFIER DIODE |
| 封裝： | PLASTIC, FULL PACK-3 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 46K |
| 代理商： | BYQ28X-150 |
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYQ28X series
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
R.M.S. isolation voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
f = 50-60 Hz; sinusoidal
waveform;
R.H.
≤
65% ; clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
-
10
-
pF
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
th j-hs
Thermal resistance junction to
heatsink
R
th j-a
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
without heatsink compound
in free air
MIN.
-
-
-
TYP.
-
-
55
MAX.
5.7
6.7
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
V
F
Forward voltage (per diode)
CONDITIONS
I
F
= 5 A; T
j
= 150C
I
F
= 5 A
I
F
= 10 A
V
R
= V
RWM
; T
j
= 100 C
V
R
= V
RWM
MIN.
-
-
-
-
-
TYP.
0.80
0.95
1.10
0.1
2
MAX.
0.895
1.10
1.25
0.2
10
UNIT
V
V
V
mA
μ
A
I
R
Reverse current (per diode)
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
Q
s
Reverse recovery charge (per
diode)
t
rr1
Reverse recovery time (per
diode)
t
rr2
Reverse recovery time (per
diode)
V
fr
Forward recovery voltage (per
diode)
CONDITIONS
I
F
= 2 A; V
R
≥
30 V; -dI
F
/dt = 20 A/
μ
s
MIN.
-
TYP.
4
MAX.
9
UNIT
nC
I
= 1 A; V
≥
30 V;
-dI
/dt = 100 A/
μ
s
I
F
= 0.5 A to I
R
= 1 A; I
rec
= 0.25 A
-
15
25
ns
-
10
20
ns
I
F
= 1 A; dI
F
/dt = 10 A/
μ
s
-
1
-
V
August 1996
2
Rev 1.000
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