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參數(shù)資料
| 型號： | BYQ28EX -150 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Rectifier diodes ultrafast, rugged |
| 中文描述： | 超快速、堅固耐用的整流二極管 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 54K |
| 代理商： | BYQ28EX -150 |
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYQ28F, BYQ28EX series
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
Fast switching
Soft recovery characteristic
Reverse surge capability
High thermal cycling performance
Isolated mounting tab
V
R
= 150 V/ 200 V
V
F
≤
0.895 V
I
O(AV)
= 10 A
I
RRM
= 0.2 A
t
rr
≤
25 ns
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power
supplies.
The BYQ28F series is supplied in the SOT186 package.
The BYQ28EX series is supplied in the SOT186A package.
PINNING
SOT186
SOT186A
PIN
DESCRIPTION
1
anode 1 (a)
2
cathode (k)
3
anode 2 (a)
tab
isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
BYQ28F / BYQ28EX
MIN.
MAX.
UNIT
-150
150
150
150
-200
200
200
200
V
RRM
V
RWM
V
R
I
O(AV)
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Average rectified output current square wave
(both diodes conducting)
1
Repetitive peak forward current t = 25
μ
s;
δ
= 0.5;
per diode
Non-repetitive peak forward
current per diode
-
-
-
-
V
V
V
A
T
hs
≤
148C
10
δ
= 0.5; T
hs
≤
92 C
I
FRM
-
10
A
T
≤
92 C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
V
I
FSM
-
-
50
55
A
A
I
RRM
Repetitive peak reverse current t
p
= 2
μ
s;
δ
= 0.001
per diode
Non-repetitive peak reverse
current per diode
Storage temperature
Operating junction temperature
-
0.2
A
I
RSM
t
p
= 100
μ
s
-
0.2
A
T
stg
T
j
-40
-
150
C
C
k
a1
1
a2
3
2
1 2 3
case
1 2 3
case
1
Neglecting switching and reverse current losses
October 1998
1
Rev 1.300
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。