參數資料
型號: BYQ28ED
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: SERVSWITCH CPU CABL FOR ACU/ACSEXTENDRS SW613A 20
中文描述: 10 A, 200 V, SILICON, RECTIFIER DIODE
文件頁數: 1/8頁
文件大?。?/td> 62K
代理商: BYQ28ED
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYQ28E, BYQ28EB, BYQ28ED series
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
Fast switching
Soft recovery characteristic
Reverse surge capability
High thermal cycling performance
Low thermal resistance
V
R
= 150 V/ 200 V
V
F
0.895 V
I
O(AV)
= 10 A
I
RRM
= 0.2 A
t
rr
25 ns
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power
supplies.
The BYQ28E series is supplied in the SOT78 conventional leaded package.
The BYQ28EB series is supplied in the SOT404 surface mounting package.
The BYQ28ED series is supplied in the SOT428 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404
SOT428
PIN
DESCRIPTION
1
anode 1
2
cathode
1
3
anode 2
tab
cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
BYQ28E/ BYQ28EB/ BYQ28ED
MIN.
MAX.
UNIT
-150
150
-200
200
V
RRM
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified output
current (both diodes
conducting)
Repetitive peak forward
current per diode
Non-repetitive peak forward
current per diode
-
V
V
RWM
-
150
200
V
V
R
I
O(AV)
-
-
150
200
V
A
square wave;
δ
= 0.5; T
mb
119 C
10
I
FRM
square wave;
δ
= 0.5; T
mb
119 C
-
10
A
I
FSM
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied V
RRM(max)
t
p
= 2
μ
s;
δ
= 0.001
-
-
50
55
A
A
I
RRM
Peak repetitive reverse
surge current per diode
Peak non-repetitive reverse
surge current per diode
Operating junction
temperature
Storage temperature
1
. It is not possible to make connection to pin 2 of the SOT428 or SOT404 packages.
-
0.2
A
I
RSM
t
p
= 100
μ
s
-
0.2
A
T
j
-
150
C
T
stg
- 40
150
C
k
a1
1
a2
3
2
1
2
3
tab
1
3
tab
2
1 2 3
tab
October 1998
1
Rev 1.300
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