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參數(shù)資料
| 型號： | BYG90-90 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Circular Connector; No. of Contacts:6; Series:TVS06; Body Material:Metal; Connecting Termination:Crimp; Connector Shell Size:11; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:11-98 |
| 中文描述： | 1 A, 90 V, SILICON, SIGNAL DIODE |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 37K |
| 代理商： | BYG90-90 |
1996 May 13
2
Philips Semiconductors
Product specification
Schottky barrier rectifier diode
BYG90-90
FEATURES
Low switching losses
High breakdown voltage
Capability of absorbing very high
surge current
Fast recovery time
Guard ring protected
Plastic SMD package.
APPLICATIONS
Low power switched-mode power
supplies
Rectifying
Polarity protection.
DESCRIPTION
The BYG 90-90 is a Schottky barrier rectifier diode, fabricated in planar
technology, and encapsulated in the rectangular SOD106A plastic SMD
package.
Fig.1 Simplified outline (SOD106A) and symbol.
handbook, 4 columns
MAM129 - 1
Top view
k
a
cathode identifier
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1.
2.
Refer to SOD106A standard mounting conditions.
For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power
losses P
R
are a significant part of the total power losses. Nomograms for determination of the reverse power losses
P
R
and I
F(AV)
rating will be available on request.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
R
V
RRM
V
RWM
I
F(AV)
continuous reverse voltage
repetitive peak reverse voltage
90
90
V
V
crest working reverse voltage
average forward current
90
1
V
A
T
amb
= 100
°
C; see Fig.2;
R
th j-a
= 13.5 K/W; note 1;
V
R(equiv)
= 0.2 V; note 2
t = 8.3 ms half sine wave;
JEDEC method
t
p
= 100
μ
s
I
FSM
non-repetitive peak forward current
30
A
I
RSM
T
stg
T
j
non-repetitive peak reverse current
65
0.5
A
°
C
°
C
storage temperature
+150
junction temperature
150
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