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參數(shù)資料
| 型號： | BYG90-40 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | INNOLINE: RP50-S - Single Outputs up to 15A- Input/Output 1.6kVDC Isolation- Adjustable Output Voltage- No Minimum Load- Under -Voltage Lockout- Industry Standard Footprint- Fixed Operating Frequency- Halt Tested- Compact 61.0 x 57.91 x 12.7mm Package- High Efficiency to |
| 中文描述： | 1 A, 40 V, SILICON, SIGNAL DIODE |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 36K |
| 代理商： | BYG90-40 |
1996 May 06
3
Philips Semiconductors
Product specification
Schottky barrier rectifier diodes
BYG90-40 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1.
2.
Refer to SOD106A standard mounting conditions.
For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power
losses P
R
are a significant part of the total power losses. Nomograms for determination of the reverse power losses
P
R
and I
F(AV)
rating will be available on request.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
V
R
continuous reverse voltage
BYG90-20
20
V
BYG90-30
30
V
BYG90-40
40
V
V
RRM
repetitive peak reverse voltage
BYG90-20
20
V
BYG90-30
30
V
BYG90-40
40
V
V
RWM
crest working reverse voltage
BYG90-20
20
V
BYG90-30
30
V
BYG90-40
40
V
I
F(AV)
average forward current
T
amb
= 65
°
C; see Fig.2;
R
th j-a
= 80 K/W; note 1;
V
R(equiv)
= 0.2 V; note 2
t = 8.3
μ
s half sine wave;
JEDEC method
t
p
= 100
μ
s
1
A
I
FSM
non-repetitive peak forward current
30
A
I
RSM
T
stg
T
j
non-repetitive peak reverse current
65
0.5
A
°
C
°
C
storage temperature
+125
junction temperature
125
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