參數(shù)資料
型號: BYG80A
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Ultra fast low-loss controlled avalanche rectifiers
中文描述: 0.95 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC
封裝: PLASTIC, DO-214AC, 2 PIN
文件頁數(shù): 4/20頁
文件大?。?/td> 104K
代理商: BYG80A
1997 Nov 25
4
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
THERMAL CHARACTERISTICS
Notes
1.
2.
Device mounted on Al
2
O
3
printed-circuit board, 0.7 mm thick; thickness of copper
35
μ
m, see Fig.27.
Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
40
μ
m, see Fig.27.
For more information please refer to the “General Part of associated Handbook”
V
(BR)R
reverse avalanche
breakdown voltage
BYG80A
BYG80B
BYG80C
BYG80D
BYG80F
BYG80G
BYG80J
reverse current
I
R
= 0.1 mA
55
110
165
220
330
440
675
V
V
V
V
V
V
V
μ
A
I
R
V
R
= V
RRMmax
;
see Figs 24 and 25
V
R
= V
RRMmax
; T
j
= 165
°
C;
see Figs 24 and 25
10
I
R
reverse current
BYG80A to D
BYG80F; BYG80G and J
reverse recovery time
BYG80A to D
BYG80F; BYG80G and J
diode capacitance
BYG80A to D
BYG80F; BYG80G
BYG80J
maximum slope of reverse
recovery current
BYG80A to D
BYG80F; BYG80G and J
100
150
μ
A
μ
A
t
rr
when switched from I
F
= 0.5 A to
I
R
= 1 A; measured at I
R
= 0.25 A;
see Fig.29
25
50
ns
ns
C
d
f = 1 MHz; V
R
= 0; see Fig.26
90
70
65
pF
pF
pF
when switched from I
F
= 1 A to
V
R
30 V and dI
F
/dt =
1 A/
μ
s;
see Fig.28
3
4
A/
μ
s
A/
μ
s
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
R
th j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
25
K/W
K/W
K/W
note 1
note 2
100
150
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
dI
R
dt
--------
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