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參數(shù)資料
| 型號： | BYG50G |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Controlled avalanche rectifiers |
| 中文描述： | 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 41K |
| 代理商： | BYG50G |
1996 May 24
3
Philips Semiconductors
Preliminary specification
Controlled avalanche rectifiers
BYG50 series
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C; unless otherwise specified.
THERMAL CHARACTERISTICS
Notes
1.
2.
Device mounted on Al
2
O
3
printed-circuit board, 0.7 mm thick; thickness of copper
≥
35
μ
m, see Fig.7.
Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
≥
40
μ
m, see Fig.7.
For more information please refer to the “General Part of associated Handbook”
E
RSM
non-repetitive peak reverse avalanche
energy
BYG50D to J
L = 120 mH; T
j
= T
j max
prior to
surge; inductive load switched off
10
mJ
BYG50K and M
7
mJ
°
C
°
C
T
stg
T
j
storage temperature
65
65
+175
junction temperature
see Fig.4
+175
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
forward voltage
I
F
= 1 A; T
j
= T
j max;
see Fig.5
I
F
= 1 A; see Fig.5
I
R
= 0.1 mA
0.85
1.00
V
V
V
(BR)R
reverse avalanche
breakdown voltage
BYG50D
BYG50G
BYG50J
BYG50K
BYG50M
reverse current
300
500
700
900
1100
2
V
V
V
V
V
μ
A
μ
A
μ
s
I
R
V
R
= V
RRMmax
; see Fig.6
V
R
= V
RRMmax
; T
j
= 165
°
C; see Fig.6
when switched from I
F
= 0.5 A to
I
R
= 1 A; measured at I
R
= 0.25 A;
see Fig.8
1
100
t
rr
reverse recovery time
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
R
th j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
25
K/W
K/W
K/W
note 1
note 2
100
150
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
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相關代理商/技術參數(shù) |
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| BYG50J | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Controlled avalanche rectifiers |
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