參數(shù)資料
型號: BYG50D
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Controlled avalanche rectifiers
中文描述: 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC
封裝: PLASTIC PACKAGE-2
文件頁數(shù): 4/6頁
文件大小: 41K
代理商: BYG50D
1996 May 24
4
Philips Semiconductors
Preliminary specification
Controlled avalanche rectifiers
BYG50 series
GRAPHICAL DATA
Fig.2
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
V
R
= V
RRMmax
;
δ
= 0.5; a = 1.57.
handbook, halfpage
IF(AV)
(A)
0
160
200
0
MBH396
2
1
3
80
120
40
Ttp (
°
C)
Fig.3
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
V
R
= V
RRMmax
;
δ
= 0.5; a = 1.57.
Device mounted as shown in Fig.7
Solid line: Al
2
O
3
PCB; dotted line: epoxy PCB.
handbook, halfpage
(A)
0
160
200
0
MBH397
0.8
1.2
0.4
1.6
80
120
40
Tamb (
°
C)
Device mounted as shown in Fig.7.
Solid line: Al
2
O
3
PCB.
Dotted line: epoxy PCB.
Fig.4
Maximum permissible junction temperature
as a function of reverse voltage.
handbook, halfpage
(
°
C)
160
0
400
1200
0
MGD483
800
VR (V)
40
D
G
J
K
M
80
120
Solid line: T
j
= 25
°
C.
Dotted line: T
j
= 175
°
C.
Fig.5
Forward current as a function of forward
voltage; maximum values.
handbook, halfpage
(A)
0
1.6
2.0
0
MBH398
4
6
2
8
0.8
1.2
0.4
VF (V)
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