參數(shù)資料
型號(hào): BYG26J
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: SMA ultra fast soft-recovery controlled avalanche rectifiers
中文描述: 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC
封裝: PLASTIC PACKAGE-2
文件頁(yè)數(shù): 2/12頁(yè)
文件大?。?/td> 60K
代理商: BYG26J
2000 Feb 14
2
Philips Semiconductors
Product specification
SMA ultra fast soft-recovery
controlled avalanche rectifiers
BYG26 series
FEATURES
Glass passivated
High maximum operating temperature
Ideal for surface mount automotive applications
Low leakage current
Excellent stability
Guaranteed avalanche energy absorption capability
UL 94V-O classified plastic package
Shipped in 12 mm embossed tape
Marking: cathode, date code, type code
Easy pick and place.
DESCRIPTION
DO-214AC surface mountable package with glass
passivated chip.
The well-defined void-free case is of a transfer-moulded
thermo-setting plastic. The small rectangular package has
two J bent leads.
olumns
MSA474
Top view
Side view
cathode
band
k
a
Fig.1 Simplified outline (DO-214AC) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
repetitive peak reverse voltage
BYG26D
BYG26G
BYG26J
continuous reverse voltage
BYG26D
BYG26G
BYG26J
root mean square voltage
BYG26D
BYG26G
BYG26J
average forward current
200
400
600
V
V
V
V
R
200
400
600
V
V
V
V
RMS
140
280
420
1
V
V
V
A
I
F(AV)
averaged over any 20 ms period;
T
tp
= 85
°
C; see Fig.2
t = 8.3 ms half sine wave;
T
j
= 25
°
C prior to surge;
V
R
= V
RRMmax
I
FSM
non-repetitive peak forward current
15
A
T
stg
T
j
storage temperature
junction temperature
65
65
+175
+175
°
C
°
C
See Fig.3
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