參數(shù)資料
型號(hào): BYG21K
廠商: Vishay Intertechnology,Inc.
英文描述: Fast Silicon Mesa SMD Rectifier
中文描述: 快速貼片整流硅梅薩
文件頁數(shù): 1/5頁
文件大小: 58K
代理商: BYG21K
BYG21
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 3, 24-Jun-98
1 (5)
Document Number 86010
Fast Silicon Mesa SMD Rectifier
Features
Glass passivated junction
Low reverse current
Soft recovery characteristics
Fast reverse recovery time
Good switching characteristics
Wave and reflow solderable
Applications
Surface mounting
Fast rectifier
Freewheeling diodes in SMPS and converters
Snubber diodes
15 811
Absolute Maximum Ratings
T
j
= 25 C
Parameter
Reverse voltage
=Repetitive peak reverse voltage
Peak forward surge current
Test Conditions
Type
BYG21K
BYG21M
Symbol
V
R
=V
RRM
V
R
=V
RRM
I
FSM
Value
800
1000
30
Unit
V
V
A
t
p
=10ms,
half sinewave
Average forward current
Junction and storage
temperature range
Pulse energy in avalanche mode,
non repetitive
(inductive load switch off)
I
FAV
T
j
=T
stg
1.5
A
C
–55...+150
I
(BR)R
=1A, T
j
=25 C
E
R
20
mJ
Maximum Thermal Resistance
T
j
= 25 C
Parameter
Junction lead
T
L
=const.
Junction ambient
mounted on epoxy–glass hard tissue
mounted on epoxy–glass hard tissue, 50mm
2
35 m Cu
mounted on Al–oxid–ceramic (Al
2
O
3
), 50mm
2
35 m Cu
Test Conditions
Symbol
R
thJL
R
thJA
R
thJA
R
thJA
Value
25
150
125
100
Unit
K/W
K/W
K/W
K/W
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